Energy-band structure of semiconductors having the chalcopyrite lattice

Поплавной, А. С.; Polygalov, Yu. I.; Chaldyshev, V. A.

doi:10.1007/bf01879826

Cited by 5 publications

(4 citation statements)

References 6 publications

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“…This value is close to the forbidden energy gap E , = 2.24 eV obtained from transmission spectra [a] and is higher than the theoretical one (1.65 eV) for MgSiP, [5]. At lower temperatures two shoulders are revealed for this polarization of light.…”

Section: Resultssupporting

confidence: 82%

“…The intensities and polarization dependences show the peaks B', C' to be related to the pseudodirect transitions 1'7,6(1'6) -+ F8(r3) [5,81. Moreover, the energy separation between B' and C' agrees well with the spin-orbit splitting A,, of the higher valence G. AMBRAZEVI~IUS, G. BABONAS, Yu.…”

Section: Discussionmentioning

confidence: 93%

“…V. RUD, and A. SILEIKA bands in phosphides of the AIIBIvCX type [ 121. The other pseudodirect transitions T6(r4) --f I?6(I?,) become allowed for e 1 c when the spin-orbit interaction is included [5,81. The corresponding structure A' is by about five times weaker than B', C' in the pseudodirect bandgap ternary compounds [ l o ] and in MgSiP, can be masked by stronger absorption a t higher photon energies.…”

Section: Discussionmentioning

confidence: 99%

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The Fundamental Absorption Edge of MgSiP₂

Ambrazevičius

Babonas

Rud

et al. 1981

Physica Status Solidi (b)

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The absorption and wavelength-modulated absorption spectra of MgSiP, single crystals are investigated in the region of the fundamental absorption edge a t 4.2, 77, and 300 K and under hydrostatic pressures up to 770 MPa. MgSiP, is determined to be a pseudodirect bandgap compound with a forbidden energy gap of 2.409,2.404, and 2.33 eV a t 4.2, 77, and 300 K, respectively. The pressure coefficient of the absorption edge is -2 X eV MPa-1. The spin-orbit splitting a t the top of the valence band of MgSiP, is close to that for phosphides of the AIIBIVCZ type. The crystal-field splitting of the higher valence band is proposed to be negative. MgSiP, B o6nacTH O C H O B H O~O KpaR npm 4,2, 77 H 300 K, a TaHlKe n p~ rmHpocTaTmsecKHx eEmeHmeM AIIBIVC? c lunpn~oii a a n p e~u e~~o i i ~O H~I 2,409,2,404 H 2,33 eV IIPH 4 , 2 , 7 7 illgSiP, 6~1~1 3~0 K TaKoBoMy AJIR apyrmx (POCQHAOB AIIBIVC;. rIpennonaraeTcfi, YTO npeACTaBJIeHb1 pe3yJIbTaTbI HCCJIeAOBaHHR CIIeKTpOB IIorJIo~eHHfi H MAB n o r n o 4 e~~f i ElaBJIeHIIFIX A 0 770 MPa. YCTaHOBJIeHO, 9 T O MgSiP, FlBJIFleTCR IICeBAOIIpFlM030HHbIM CO-II 300 I< COOTBeTCTBeHHO. KO3$l$lHIiHeHT na%JIeHHfi IIIHpHHbI 3aIIpeIUeHHOfi 30HbI PaBeH -2 X eV/MPa. CIIHH-Op6uTaJIbHOe PaCUeIIJIeHHe BepIIIHHbI BaJIeHTHOa 30HbI dcr B MgSiP, OTpHUaTeJIbHO.

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Section: Resultssupporting

confidence: 82%

Section: Discussionmentioning

confidence: 93%

Section: Discussionmentioning

confidence: 99%

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The Fundamental Absorption Edge of MgSiP₂

Ambrazevičius

Babonas

Rud

et al. 1981

Physica Status Solidi (b)

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“…The energies and pronounced polarizations of the reflectance peaks for the ternary compounds are listed in Table 1. The calculated energies of characteristic optical transitions in binary analogs (AlP + InP)/2, (AIP + GaP)/2 [6, 71 and those in CdSiP, [8], ZnSiP, [9, 101 are also included. The notation of peaks is the same as in [ll].…”

Section: Resultsmentioning

confidence: 99%

Reflectance spectra of CdSiP₂ and ZnSiP₂

Ambrazevičius

Babonas

Šileika

1979

Physica Status Solidi (b)

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Reflectance spectra of CdSiP, and ZnSiP, are measured a t 300 K in the range 1 to 12 eV. These ternary compounds are electronic analogs of AIP and have the shortest bond Si-P among the B'IBIVC: semiconductors. The peculiarity of the investigated optical spectra is a close proximity and possible overlap of peaks which correspond to the structures El and E, in A'I1BY?ompounds. The mean energies of the characteristic peak groups in the AI'SICZ compounds are shown to scale linearly with the average energy gap calculated by the dielectric theory. npeACTaBneHb1 pe3yJILTaThI MCCJIeXOBaHMR CIIehTpOB OTpameHIIR CdSiP, M ZnSiP, B 06-JIaCTM 1 20 12 eV IIpM 300 K. OCO6eHHOCTbH) OIITIIYeCKMX CIIeKTpOB 3TMX COeHIIHeHMfi, HBJIRIOUIMXCFI ai3axoraMH Alp PI xapa~~epu3yemrx HanFonee K O P O T H O~~ cpenn coeipmemM A"BIVCF C B R~L H ) Si-P -c6nrmeme II B O~M O~I I O~ nepeqmTMe onTmecmx nepexonoe, C0OTBeTCTBYK)IUIIX IIllKaM El II E3 B A1"BV. nOJIyseHO,9TO B COeHHHeHIIRX A''SiC2-cpe-HHIIe 3HeprMM HJIR XapaIrTepHbIX rpyIIII IIHROB B OIITM9eCIiMX CIIeIiTpaX ll3MeHRK)TCR IIpOIIOpUMOHaJIbHO CpClHefi IIIIIpMHe 3aIIpeUIeIIHOii 30Hb1, BbIYMCJIeHHOfi IIO nH3JIehTpM-YecKoa Teopmi xmvasecIcoii C B R~M .

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