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Lin‐Chung, P. J.

doi:10.1103/physrev.188.1272

Cited by 85 publications

(41 citation statements)

References 13 publications

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“…For A, = 457.9 nin the relative intensities of both peaks are nearly the same. The resonant-like behaviour of the bands a t 25 and 46 em-l would be related to the maxima in the jointdensity of e-h pair states observed at 2.1 and 2.8 eV [7, 81 and predicted by the simplified Lin Chung model [9]. For the energy of the incident radiation between of them, some cancellation of the resonant terms in the expression for the RS cross section can result in the fluctuations of their intensities in a way as observed in the spectra in Fig.…”

Section: Discussionmentioning

confidence: 98%

“…"unit cells" determines the crystal structure of the I13-V2 compounds 1111. The cc-Cd3As2 crystal structure being appreciably complex, would be considerably simplified when treated as a distorted fluorite-type one with two tetrahedral vacancies [9]. I n the real cr-Cd3As2 structure Cd atoms are displaced from their ideal positions towards the non-occupied sites.…”

Section: Crystal Structurementioning

confidence: 99%

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Some aspects of raman scattering in Cd₃As₂ single crystals

Weszka¹,

Renucci²,

Zwick³

1986

Physica Status Solidi (b)

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Raman scattering measurements in the tetragonal CdSAs, single crystals are carried out a t temperatures of 300 and 77 K. The spectra obtained are interpreted in terms of phonon-electron and electron-electron interactions. The features in the low-frequency interval are due to contributions from phonon and single particle scattering. The electronic RS involving intra-and interband excitations is dominant a t frequencies higher than 80 cm-l. The resonant enhancement of the band a t 300 cm-l arises from the incident light frequency being in the vicinity of El -C4.La diffusion Raman dans les mono-cristaux de C%As, quadratique a &tit BtudiBe Q 300 et 77 K. Les spectres Raman obtenus sont interprBt6s en termes des interactions un phonon-electron etBlectron-6lectron. Des spectres en region de basses frkquences sont attribuks Q la diffusion It un phonon et It une particule. Cependant la diffusion Raman faisant intervenir des excitations Blectroniques intra-et interbandes est dominant aux frhquences au-dessus de 80 cm-l. Une croissance resonante d'une bande Q 300 cm-l resulte du voisinage des Bnergies de raie incidente et un seuil d'excitation El -E4.

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Section: Discussionmentioning

confidence: 98%

Section: Crystal Structurementioning

confidence: 99%

Some aspects of raman scattering in Cd₃As₂ single crystals

Weszka¹,

Renucci²,

Zwick³

1986

Physica Status Solidi (b)

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“…There is a n error in the equation given for the matrix element (1'1 V,, lk) in [2]. I n the argument of the second cosinus is written 1/2(aq') instead of l/S(aq').…”

Section: Spin-orbit Couplingmentioning

confidence: 98%

Spin–Orbit and Crystal Field Splittings of the Valence Band in II₃V₂ Semiconducting Compounds

Dowgiałło‐Plenkiewicz

Plenkiewicz

1978

Physica Status Solidi (b)

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“…24 In the case of tetragonal-phase Zn 3 As 2 (c/a ≈ 2), its sublattice is nearly identical to that of the fcc unit cell, except for a 0.37% elongation along the c axis. 25 As a result, Zn 3 P 2 and Zn 3 As 2 have pseudocubic crystal structures. However, it is not known whether they form a solid solution over the entire compositional range, as do Cd 3 P 2 −Cd 3 As 2 and Zn 3 P 2 −Cd 3 P 2 .…”

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confidence: 98%

Zn₃P₂–Zn₃As₂ Solid Solution Nanowires

Park

Jang

et al. 2015

Nano Lett.

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Semiconductor alloy nanowires (NWs) have recently attracted considerable attention for applications in optoelectronic nanodevices because of many notable properties, including band gap tunability. Zinc phosphide (Zn3P2) and zinc arsenide (Zn3As2) belong to a unique pseudocubic tetragonal system, but their solid solution has rarely been studied. Here In this study, we synthesized composition-tuned Zn3(P1-xAsx)2 NWs with different crystal structures by controlling the growth conditions during chemical vapor deposition. A first type of synthesized NWs were single-crystalline and grew uniformly along the [110] direction (in a cubic unit cell) over the entire compositional range (0 ≤ x ≤ 1) explored. The use of an indium source enabled the growth of a second type of NWs, with remarkable cubic-hexagonal polytypic twinned superlattice and bicrystalline structures. The growth direction of the Zn3P2 and Zn3As2 NWs was also switched to [111] and [112], respectively. These structural changes are attributable to the Zn-depleted indium catalytic nanoparticles which favor the growth of hexagonal phases. The formation of a solid solution at all compositions allowed the continuous tuning of the band gap (1.0-1.5 eV). Photocurrent measurements were performed on individual NWs by fabricating photodetector devices; the single-crystalline NWs with [110] growth direction exhibit a higher photoconversion efficiency compared to the twinned crystalline NWs with [111] or [112] growth direction.

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Energy-Band Structures ofCd3As2and
P. J. Lin‐Chung
¹

Cited by 85 publications

References 13 publications

Some aspects of raman scattering in Cd₃As₂ single crystals

Some aspects of raman scattering in Cd₃As₂ single crystals

Spin–Orbit and Crystal Field Splittings of the Valence Band in II₃V₂ Semiconducting Compounds

Zn₃P₂–Zn₃As₂ Solid Solution Nanowires

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Energy-Band Structures ofCd3As2andP. J. Lin‐Chung1

Cited by 85 publications

References 13 publications

Some aspects of raman scattering in Cd3As2 single crystals

Some aspects of raman scattering in Cd3As2 single crystals

Spin–Orbit and Crystal Field Splittings of the Valence Band in II3V2 Semiconducting Compounds

Zn3P2–Zn3As2 Solid Solution Nanowires

Contact Info

Product

Resources

About

Energy-Band Structures ofCd3As2and
P. J. Lin‐Chung
¹

Some aspects of raman scattering in Cd₃As₂ single crystals

Some aspects of raman scattering in Cd₃As₂ single crystals

Spin–Orbit and Crystal Field Splittings of the Valence Band in II₃V₂ Semiconducting Compounds

Zn₃P₂–Zn₃As₂ Solid Solution Nanowires