Engineering quantum phenomena of two-dimensional nearly
free electron
states has been at the forefront of nanoscience studies ever since
the first creation of a quantum corral. Common strategies to fabricate
confining nanoarchitectures rely on manipulation or on applying supramolecular
chemistry principles. The resulting nanostructures do not protect
the engineered electronic states against external influences, hampering
the potential for future applications. These restrictions could be
overcome by passivating the nanostructures with a chemically inert
layer. To this end we report a scalable segregation-based growth approach
forming extended quasi-hexagonal nanoporous CuS networks on Cu(111)
whose assembly is driven by an autoprotecting h-BN
overlayer. We further demonstrate that by this architecture both the
Cu(111) surface state and image potential states of the h-BN/CuS heterostructure are confined within the nanopores, effectively
forming an extended array of quantum dots. Semiempirical electron-plane-wave-expansion
simulations shed light on the scattering potential landscape responsible
for the modulation of the electronic properties. The protective properties
of the h-BN capping are tested under various conditions,
representing an important step toward the realization of robust surface
state based electronic devices.