Energy distributions of photoelectrons emitted from p-GaN(Cs, O) with effective negative electron affinity

Pakhnevich, A. A.; Bakin, V. V.; Yazkov, A. V.; Shaibler, G. É.; Shevelev, S.V.; Tereshchenko, O. E.; Yaroshevich, A. S.; Терехов, А. С.

doi:10.1134/1.1780556

Cited by 16 publications

(6 citation statements)

References 6 publications

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“…This is justified as such electron emission energies somewhat below the conduction band minimum are also observed in photoemission with below bandgap excitation with an external laser source, with intensity and spectrum very similar to that observed in the EE from the LED . This emission spectrum is due to both photoemission in the BBR region from LED light (where below bandgap absorption occurs due to the strong electric field through Franz–Keldysh effect) and gold contact photoemission . Higher energy electron emission peaks appeared at 4 mA injected current and higher.…”

Section: Focus On Direct Observation Of Auger Measurement Of Auger‐gesupporting

confidence: 61%

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The efficiency challenge of nitride light‐emitting diodes for lighting

Weisbuch

Piccardo

Martinelli

et al. 2015

Physica Status Solidi (a)

117

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We discuss the challenges of light-emitting diodes in view of their application to solid-state lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and high intensity discharge lamps used today in the main energy consuming lighting sectors, industrial, commercial and outdoors, with more efficient and better light quality lamps. We show that both from the point of view of cost of ownership and carbon emissions reduction, the relevant metric is efficiency, more than the cost of lumens. Then, progress from present performance requires identification of the loss mechanisms in light emission from LEDs, and solutions competing with mainstream c-plane LEDS grown on sapphire need to be on par with these. Special attention is devoted to a discussion of the efficiency droop mechanisms, and of a recent direct measurement of Auger generated electrons which appear to be responsible for droop.

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Section: Focus On Direct Observation Of Auger Measurement Of Auger‐gesupporting

confidence: 61%

“…from LED light [64] (where below bandgap absorption occurs due to the strong electric field through Franz-Keldysh effect) and gold contact photoemission [62]. Higher energy electron emission peaks appeared at 4 mA injected current and higher.…”

Section: à2mentioning

confidence: 97%

The efficiency challenge of nitride light‐emitting diodes for lighting

Weisbuch

Piccardo

Martinelli

et al. 2015

Physica Status Solidi (a)

117

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“…This is achieved by assigning the CBM of each semiconductor at minus its electron affinity energy, χ α [37,38]. The experimental values for the electron affinity energy for GaN are in the range 3.1-4.1 eV [39][40][41][42]. We use a middle value of 3.4 eV in the present work.…”

Section: Example Applicationsmentioning

confidence: 99%

Band alignment and optical absorption in Ga(Sb)N alloys

Andriotis

Sheetz

Richter

et al. 2014

J. Phys.: Condens. Matter

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We extend the theory of band alignment proposed by Harrison to ternary and quaternary heteropolar semiconductors. Combining this with first-principles density functional theory incorporating the LDA/GGA+U formalism (LDA: local density approximation; GGA: generalized gradient approximation) can result in useful electronic structure predictions for new alloys. The practicality of this is demonstrated by application to the Ga(Sbx)N1-x alloys, where the feasibility of water splitting reaction under visible light irradiation is discussed.

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“…One should mention that the amount of cesium in the (Cs,O) activation layers of these photocathodes was nearly the same and equal to ∼ 1.5 monolayers, and the exposure doses of oxygen were also similar and equal to 0.3 − 0.4 Langmures. The energy diagram of NEA photocathode surface [16] shows that photoemission near ε th should be attributed to the photoexcitation of surface states which lie slightly below the Fermi level, and the value of ε th is equal to the work function of the activated semiconductor surface. On the other hand, the equality of work function for two different semiconductors could be interpreted in the following way: the work function of the activated semiconductor is equal to the work function of the (Cs,O) activation layer and only slightly depends on the substrate material [16,17].…”

Section: Photoemissionmentioning

confidence: 99%

Semiconductor surfaces with negative electron affinity

Bakin

Pakhnevich

Журавлев

et al. 2007

e-J. Surf. Sci. Nanotechnol.

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The review of the studies of GaAs and GaN surfaces performed by the authors at the Institute of Semiconductor Physics (Novosibirsk) are presented. The results of these studies are used for further elucidation of the physics of photoemission from the surfaces with negative electron affinity (NEA) and improving the performance of NEA-photocathodes. In particular, the requirements to III-V semiconductor surfaces, which are necessary for the preparation of NEA photocathodes with ultimate parameters, are analyzed. To meet these requirements, the experimental procedures aimed at preparing atomically clean and flat surfaces with certain reconstructions, which are subsequently activated to the state of NEA in ultra-high vacuum by coadsorption of cesium and oxygen, are developed. The surface morphological, structural, and electronic phenomena occurring on various stages of these preparation procedures are studied, and the relation of these phenomena to the physical limits of NEA-photocathode performance are discussed.

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Energy distributions of photoelectrons emitted from p-GaN(Cs, O) with effective negative electron affinity

Cited by 16 publications

References 6 publications

The efficiency challenge of nitride light‐emitting diodes for lighting

The efficiency challenge of nitride light‐emitting diodes for lighting

Band alignment and optical absorption in Ga(Sb)N alloys

Semiconductor surfaces with negative electron affinity

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