“…the resistivity upon the detected gas/vapours exposure, R NO 2 or R acetone , ratioed to the resistivity upon the dry air, R air , has been investigated in dependence on the sensor temperature, number of monolayers, and the detected gas concentration. The transformation from n-to p-response if going from 1 to 2 ML of F e 2 O 3 films has been observed for all explored working temperatures, i.e., 350, 400, 450, and 500 • C. The n-p conductivity transition in metallic oxides has not been uncommon; the transformation even for a particular metaloxide semiconductor (α-F e 2 O 3 , CoF e 2 O 4 ) in dependence of the working temperature [13,14] and/or the gas concentration [13]. The general ground for the conductivity change has not been clear so far and it has continued to be a matter of discussions.…”