Nanomagnetic and spintronic devices, which make use of
physical
phenomena in materials and interfaces like perpendicular magnetic
anisotropy (PMA) and spin–orbit torque (SOT) to exhibit multiple
electrically readable and controllable states, have been widely considered
as synaptic elements in analog crossbar arrays for on-chip learning
of analog neural networks (ANN). Here, in such a heavy-metal-ferromagnetic-metal-oxide-heterostructure-based
(Pt/Co/SiO2) spintronic device, multiple mixed states are first demonstrated experimentally. These mixed states correspond to different magnetization configurations between
two saturated states: all magnetic moments vertically up and all moments
vertically down (the ferromagnetic layer exhibits PMA). These mixed states are then modulated through in-plane-current
pulses, which result in SOT at the heavy-metal–ferromagnet
interface, and thus long-term potentiation (LTP) and long-term depression
(LTD) are demonstrated in the device (synaptic behavior). The experimentally
obtained LTP-and-LTD behavior is explained qualitatively through micromagnetic
simulations, which model the interface phenomena phenomenologically.
The synaptic bit resolution is then determined experimentally to be
5 (≈ 30 distinguishable states) by measuring the stability
of the mixed states. The nonlinearity and asymmetry
in the obtained LTP and LTD are quantified experimentally. Next, a
crossbar-array-based ANN is simulated using spintronic-synapse-device
models based on the experimentally obtained LTP and LTD, and reasonably
high classification accuracy is predicted for MNIST and Fashion-MNIST
data sets, despite the synaptic nonidealities like nonlinearity, asymmetry,
and cycle-to-cycle variations. The impact of nonlinearity and asymmetry
on classification accuracy is found to be much higher than that due
to limited bit resolution (we do not go below 10 bits per synapse
cell though) and cycle-to-cycle variations.