Energy gap versus alloy composition and temperature in Hg1−<i>x</i>Cd<i>x</i>Te

Hansen, Gary L.; Schmit, J. L.; Casselman, T. N.

doi:10.1063/1.330018

Cited by 626 publications

(193 citation statements)

References 19 publications

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“…9,10 This study extends upon those by reporting that HSE outperforms standard DFT on the electronic structure of the II-VI alloy Hg 1−x Cd x Te by reproducing the experimental crossover at x = 0.17 (Ref. 11 ) transitioning from a semimetallic alloy with band inversion to a gapped semiconducting alloy. HSE also achieves a valence band offset (VBO) of 0.53 eV for HgTe/CdTe(001) agreeing with the more recent experimental data and settling a controversy on the VBO.…”

Section: Introductionsupporting

confidence: 49%

Accurate electronic properties for (Hg,Cd)Te systems using hybrid density functional theory

Nicklas

Wilkins

2011

Phys. Rev. B

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Hybrid screened density functional theory better describes the electronic structure of HgTe, CdTe, and HgCdTe systems in comparison with standard density functional theory. The newer hybrid functional reproduces the band inversion in the popular HgCdTe alloy justifying it as a better method than standard density functional theory in the search for new topological insulators. In addition, the 0.53 eV valence band offset obtained using the hybrid functional supports the recently observed higher band offset in the HgTe/CdTe heterostructure.

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Section: Introductionsupporting

confidence: 49%

Accurate electronic properties for (Hg,Cd)Te systems using hybrid density functional theory

Nicklas

Wilkins

2011

Phys. Rev. B

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“…7 Cd o . 3 Ta at 300 K The dotted cUlVe represents the numerical result with an effective carrier temperature of Teft =360 K to the absorption edge.…”

Section: Methodsmentioning

confidence: 99%

Infrared photoluminescence on molecular beam epitaxially grown Hg_1-xCd_xTe layers

Kraus¹,

Becker²,

Scholl³

et al. 1993

Semicond. Sci. Technol.

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(110) and (211) GaAs was investigated in the spectral range from 0.1 aV to 1.5 eV. Emission lines were observed with a full width at half maximum down to 15 meV. Photoluminescence and transmission properties are compared over the temperature range from 4.2 K to 300 K The possible influences of Burstein-Moss shift, impurity bands and exponential band tails are discussed. Photoluminescence at high temperatures originates from band·ta·band transitions. However, low temperature photoluminecence can be attributed either to impurity bands or to additional states due to band tails.

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“…The temperature and composition dependence of the Hg 1-x Cd x Te energy gap is given by the expression [7]:…”

Section: Sensitive Structures Based On Hg 1-x CD X Te and Their Electmentioning

confidence: 99%

In–HgCdTe–In structures with symmetric nonlinear I–V characteristics for sub-THz direct detection

Kukhtaruk¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. This paper reports on the development and investigations of In-Hg 1-x Cd x Te-In structures with symmetric nonlinear I-V curves that are sensitive to sub-terahertz radiation. It is shown that at low currents photoresponse of the detectors based on these structures is due to the presence of potential barriers at the contacts. The dependences of the photoresponse as the function of the bias current are measured at the radiation frequency ν = 140 GHz in 77-300 K temperature range. The studied structures may be used as the detectors of sub-terahertz radiation at room temperature or under weak cooling. The calculated NEP of investigated In-n-Hg 0.61 Cd 0.39 Te-In detectors was 3.5·10 , if taking into account thermal and shot noise.

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Energy gap versus alloy composition and temperature in Hg1−xCdxTe

Cited by 626 publications

References 19 publications

Accurate electronic properties for (Hg,Cd)Te systems using hybrid density functional theory

Accurate electronic properties for (Hg,Cd)Te systems using hybrid density functional theory

Infrared photoluminescence on molecular beam epitaxially grown Hg_1-xCd_xTe layers

In–HgCdTe–In structures with symmetric nonlinear I–V characteristics for sub-THz direct detection

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Energy gap versus alloy composition and temperature in Hg1−xCdxTe

Cited by 626 publications

References 19 publications

Accurate electronic properties for (Hg,Cd)Te systems using hybrid density functional theory

Accurate electronic properties for (Hg,Cd)Te systems using hybrid density functional theory

Infrared photoluminescence on molecular beam epitaxially grown Hg1-xCdxTe layers

In–HgCdTe–In structures with symmetric nonlinear I–V characteristics for sub-THz direct detection

Contact Info

Product

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Infrared photoluminescence on molecular beam epitaxially grown Hg_1-xCd_xTe layers