Energy levels of interstitial manganese in silicon

Magnetic and optical properties of Mn-implanted Si material

“…This Mn 2+ in silicon indicates that the 4s electrons have been lost, while the d-shell configurations are unchanged. The level scheme with the acceptor Mn (À/0) at E c À0.13 eV, the first donor level Mn (0/+) at E c À0.45 eV observed by EPR [22] do not correspond to the PL peak A observed in Figs. 4 and 5, where E c is the energy of the top of the conduction band edge.…”

“…Interstitial manganese in silicon can exist in four charge states, which implies single-acceptor and double-donor behavior. The corresponding level scheme with the second donor level at E v +0.30 eV is established through electron paramagnetic resonance (EPR)-controlled measurements, where E v is the energy of the top of the valence band edge refered to zero [22]. The energy levels and cross sections of the transition element manganese were also measured by deep-level transient spectroscopy (DLTS) [23] and the second ionization states Mn 2+ were detected by their donor level in the lower half of the gap at E v +0.27 eV [23].…”

Electronic characterization of the manganese–boron pair in silicon

“…Czaputa et al [5] determined an energy level position for the MnB pair a t E , -0.54 eV from Hall measurements combined with E P R for defect identification. This energy value should correspond to the free enthalpy AG,.…”

Charge Carriers Compensation in a Ferromagnetic Mn-Implanted Si

“…(3, 5) shows that Mn reveals the properties of an amphoteric impurity and compensates acceptors in a highresistivity p-Si and donors in a low-resistivity n-Si. 0/+ and two rest situated in the lower half of the forbidden band at 0.27-0.32 eV and 0.34 eV, correspondingly, above the floor of valence band [3,12,13]. The sole acceptor level (Mn i ) -/0 for Mn in Si was found to be situated at 0.11 -0.13 eV below the bottom of conductivity band [13,14].…”

“…0/+ and two rest situated in the lower half of the forbidden band at 0.27-0.32 eV and 0.34 eV, correspondingly, above the floor of valence band [3,12,13]. The sole acceptor level (Mn i ) -/0 for Mn in Si was found to be situated at 0.11 -0.13 eV below the bottom of conductivity band [13,14]. Thus, one can suppose that Mn ions in the materials under consideration occupy the interstitial sites and the energy levels (Mn i ) -/0 and (Mn i ) +/++ are activated in the low-and high-resistivity Si, respectively.…”