Energy loss and stopping force of heavy ions Cu, Si, Al and F through thin Nickel (Ni) foil at low MeV energies

Dib, A.; Ammi, H.; Msimanga, M.; Mammeri, S.; Pineda-Vargas, C.A.

doi:10.1016/j.nimb.2018.11.008

Cited by 7 publications

(2 citation statements)

References 15 publications

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“…While the electronic stopping power S e ( E ) for the incident Au q + ions at different charge states in the SiO 2 film was evaluated by using the CasP‐5.2 computer code, 36 instead of other energy loss codes including SRIM, 28 which cannot provide electronic stopping power values for incident ions with selected charge states. Indeed, two different previous works 37,38 recently published by our research group as well as those of other authors 39–41 pointed out that the CasP code can be satisfactorily applied to predict charge‐state dependence of stopping cross sections for swift heavy ions in light target elements, like in the present case of Au heavy ions in Si and O target elements. It can generate stopping power values by taking into account the contribution due to different charge states, by involving target excitation and ionization as well as the ion charge exchanges arising from lose and capture electrons through the target material 36 …”

Section: Analysis Of Results Comparison With Theory and Discussionmentioning

confidence: 66%

Experimental study and thermal spike modeling of sputtering in SiO₂ thin films under MeV Au^q+ heavy ion irradiation

Boubir

Mammeri²,

Dib³

et al. 2021

Surface & Interface Analysis

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The sputtering of silicon dioxide (SiO2/Si) thin films deposited onto silicon substrates and irradiated by swift Auq+ heavy ions (q = +4 to +9) has been investigated both by experiment and via numerical modeling by varying the kinetic energy from 10 to 40 MeV. The induced sputtering yields were determined experimentally via the Rutherford backscattering spectrometry (RBS) technique using a 2‐MeV He+ ion beam. The obtained experimental results were first plotted versus the target electronic stopping power together with previous data available for the same projectile‐target system at high kinetic energies, indicating increased sputtering yields with increasing electronic energy loss. Then, the whole data were compared with numerical sputtering yield values derived both from the inelastic thermal spike model and the SRIM‐2013 simulation code by including, respectively, nonlinear elastic spikes and linear elastic collision cascades. A good agreement was observed between the measured sputtering yield data and i‐TS predicted values over higher incident energies used by using refined parameters of the ion slowing down with reduced thermophysical properties of the SiO2 thin film. Finally, the synergy between electronic and nuclear energy loss processes inducing sputtering at low incident energies was discussed through the comparison between experimental and numerical yield data.

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Section: Analysis Of Results Comparison With Theory and Discussionmentioning

confidence: 66%

Experimental study and thermal spike modeling of sputtering in SiO₂ thin films under MeV Au^q+ heavy ion irradiation

Boubir

Mammeri²,

Dib³

et al. 2021

Surface & Interface Analysis

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“…14 The specific relevance of the scarcely available data can be additionally affected by the following complication: stopping power data for heavy ions are commonly obtained in dedicated experiments performed in transmission geometry. [15][16][17][18] In this approach, a (sufficiently thin) self-supporting foil is irradiated by a monoenergetic ion beam, and the energy of the transmitted ions is detected. This method permits a rather straightforward extraction of the electronic stopping, in the absence of large-angle scattering, and thus, nuclear losses.…”

Section: Introductionmentioning

confidence: 99%

Assessing electronic energy loss of heavy ions detected in reflection geometry

Kantre

Moro

Paneta

et al. 2021

Surface & Interface Analysis

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We study energy loss spectra of bromine ions scattered from silver thin films in the energy range of 4 to 36 MeV in forward reflection geometry. The different contributions to the energy loss are analyzed by complementary Monte Carlo simulations.We assess the dependence of the scattering yield and nuclear and electronic losses on the penetration depth of detected ions. For scattering from larger depth, we observe decreased elastic losses and increased trajectory length in comparison with predictions from single scattering, with increasing effects for lower energies. To investigate the entanglement of energy loss and depth information, electronic stopping cross sections are deduced from the experimental spectra by two different approaches: (a) assuming a single scattering model and (b) making use of Monte Carlo simulations. The data obtained from the two approaches are compared, and we assess the relative contributions from nuclear stopping and from the effect of multiple scattering on trajectory length. Results of both methods are discussed in the context of composition depth profiling and compared with data from literature and with Stopping and Range of Ions in Matter (SRIM) predictions resulting in good agreement.

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Simulation study of stopping power and damage profiles of H/He plasma irradiation in tungsten and its alloys for fusion power plant

Marsi

Elmaddahi

Fechtal

et al. 2022

J Radioanal Nucl Chem

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Energy loss and stopping force of heavy ions Cu, Si, Al and F through thin Nickel (Ni) foil at low MeV energies

Cited by 7 publications

References 15 publications

Experimental study and thermal spike modeling of sputtering in SiO₂ thin films under MeV Au^q+ heavy ion irradiation

Experimental study and thermal spike modeling of sputtering in SiO₂ thin films under MeV Au^q+ heavy ion irradiation

Assessing electronic energy loss of heavy ions detected in reflection geometry

Simulation study of stopping power and damage profiles of H/He plasma irradiation in tungsten and its alloys for fusion power plant

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Energy loss and stopping force of heavy ions Cu, Si, Al and F through thin Nickel (Ni) foil at low MeV energies

Cited by 7 publications

References 15 publications

Experimental study and thermal spike modeling of sputtering in SiO2 thin films under MeV Auq+ heavy ion irradiation

Experimental study and thermal spike modeling of sputtering in SiO2 thin films under MeV Auq+ heavy ion irradiation

Assessing electronic energy loss of heavy ions detected in reflection geometry

Simulation study of stopping power and damage profiles of H/He plasma irradiation in tungsten and its alloys for fusion power plant

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Product

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Experimental study and thermal spike modeling of sputtering in SiO₂ thin films under MeV Au^q+ heavy ion irradiation

Experimental study and thermal spike modeling of sputtering in SiO₂ thin films under MeV Au^q+ heavy ion irradiation