Energy loss and straggling of H and He ions of keV energies in Si and C

Konac, G.; Kalbitzer, S.; Klatt, Ch.; Niemann, D.; Stoll, R.

doi:10.1016/s0168-583x(98)80016-5

Cited by 97 publications

(34 citation statements)

References 14 publications

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“…The method is based on collecting a series of spectra at different beam energies, and analysing them all simultaneously, with the continuous stopping power or cross section curve treated as fit parameters. For 4 He in Si, results equivalent within the experimental uncertainty to SRIM03 version 2006.02 [27] and Konac et al [28] were obtained [25].…”

Section: Advanced Algorithmsmentioning

confidence: 95%

Advanced physics and algorithms in the IBA DataFurnace

Barradas

Jeynes

2008

Nuclear Instruments and Methods in Physics Research Section B:

159

118

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Section: Advanced Algorithmsmentioning

confidence: 95%

Advanced physics and algorithms in the IBA DataFurnace

Barradas

Jeynes

2008

Nuclear Instruments and Methods in Physics Research Section B:

159

118

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“…The inaccuracy of these stopping power values is cited to be 1-2%. [81], (the stopping cross-section used for this work), NKK96 = Niemann et al [82], SW80 = Santry and Werner [83], TRIM95 = Ziegler et al [75]) The accelerator used for RBS measurements was a National Electrostatics Corporation 3 MV tandem accelerator located at the Ion beam Materials Laboratory at Los Alamos National Laboratory, New Mexico, USA. The RBS spectra were obtained using a 4 He + beam with energies ranging from 2.0 MeV to 3.036 MeV.…”

Section: Mev Ion Beammentioning

confidence: 99%

“…For the incoming He ion beam, as in the RBS analysis, the stopping cross sections from Konac et al [81] were implemented in the computer program. The stopping power of the forward recoiled hydrogen atoms was also taken from the work of Konac et al (see figure [4][5][6][7][8] and implemented in the simulations, since their accuracy was shown to be 1-2% [88].…”

Section: Rbs Spectrummentioning

confidence: 99%

“…The adjusted spectrum is then corrected for the energy spread (c) and finally the xaxis is translated into the depth scale (d). To illustrate the accuracy of the chosen stopping powers for He and H in silicon, a TRIM simulation with the stopping powers from Konac et al [81] (used in this work) and from Ziegler et al [75] are overlaid. [75] using either the stopping power data from Konac et al [81] or from Ziegler et al [75].…”

Section: µM Absorber Foilmentioning

confidence: 99%

“…To illustrate the accuracy of the chosen stopping powers for He and H in silicon, a TRIM simulation with the stopping powers from Konac et al [81] (used in this work) and from Ziegler et al [75] are overlaid. [75] using either the stopping power data from Konac et al [81] or from Ziegler et al [75]. The results suggest that the stopping data used in this work are very accurate: The analysis of the ERD spectrum uses He stopping power in the MeV range, whereas the TRIM simulation uses H stopping power in the keV regime.…”

Section: µM Absorber Foilmentioning

confidence: 99%

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On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Höchbauer

2001

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ZusammenfassungDer sogenannte "Ion-Cut", ein Schichtabspaltungsprozess mittels WasserstoffIonenimplantation und darauffolgender Probenerwärmung ist eine effektive, vielseitige und ökonomische Methode, um Siliziumschichten mit einer Dicke von nur einigen Nanometern von einem Siliziumsubstrat auf andere Materialien zu transferieren. Somit ermöglicht der Ion-Cut die Produktion von Siliziumschichen auf isolierenden Materalien ("silicon-on-insulator" (SOI) AbstractThe "Ion-Cut", a layer splitting process by hydrogen ion implantation and subsequent annealing is a versatile and efficient technique of transferring thin silicon surface layers from bulk substrates onto other substrates, thus enabling the production of silicon-oninsulator (SOI) materials. Cleavage is induced by the coalescence of the highly pressurized sub-surface H 2 -gas bubbles, which form upon thermal annealing. A fundamental understanding of the basic mechanisms on how the cutting process occurs is still unclear, inhibiting further optimization of the Ion-Cut process. This work elucidates the physical mechanisms behind the Ion-Cut process in hydrogen-implanted silicon. The investigation of the cleavage process reveals the cut to be largely controlled by the lattice damage, generated by the hydrogen ion irradiation process, and its effects on the local stress field and the fracture toughness within the implantation zone rather than by the depth of maximum H-concentration. Furthermore, this work elucidates the different kinetics in the H-complex formations in silicon crystals with different conductivity types, and examines the mechanically induced damage accumulation caused by the crack propagation through the silicon sample in the splitting step of the Ion-Cut process. Additionally, the influence of boron pre-implantation on the Ion-Cut in hydrogen implanted silicon is investigated. These studies reveal, that both, the atomic interaction between the boron implant and the hydrogen implant and the shift of the Fermi level due to the electrical activation of the implanted boron have a tremendous enhancing effect on the Ion-Cut process.

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Proton stopping data from experiment and theory

Kalbitzer¹

2005

Physica Status Solidi (b)

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Proton stopping cross‐sections in several solid and gaseous targets have been calculated by applying the Bethe–Bloch formalism to each electron shell. In addition, binary collision kinetics for both proton and electron in motion have been taken into account. The calculations closely match experimental data on C and Si by us and on He and Ne by TRIM. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Energy loss and straggling of H and He ions of keV energies in Si and C

Cited by 97 publications

References 14 publications

Advanced physics and algorithms in the IBA DataFurnace

Advanced physics and algorithms in the IBA DataFurnace

On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Proton stopping data from experiment and theory

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