Energy loss rate and non-ohmic characteristics of a degenerate surface layer of compound semiconductors at low lattice temperatures

Roy, B.; Bhattacharyya, Suvanjan; Bhattacharya, D.P.

doi:10.1016/j.physe.2020.114465

Cited by 3 publications

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These reports of mid-IR and near-IR QW lasers used photoluminescence (PL) spectra to show that hot charge carrier phenomena can improve properties such as interband threshold energy. Moreover, the study of the energy loss rate during hot charge carrier relaxation was an important aspect of investigations into carrier scattering effects on physical properties of nanostructures during external perturbation [10,11].…”

Section: Introductionmentioning

confidence: 99%

PL Spectra and Hot Charge Carrier Phenomena in an Undoped GaAs/AlGaAs Tunnel-Coupled Quantum Well

Jarusirirangsi

Dommelen

Daengngam

2021

Journal of Nanomaterials

View full text Add to dashboard Cite

In this research, we experimentally investigated the photoluminescence (PL) spectra of an undoped GaAs/Al0.36Ga0.64As Tunnel-Coupled Quantum Well (TCQW) at 300 K and 77 K. At 300 K, PL spectra were broadened at various laser intensities due to the characteristic quantum-confinement electron levels in the active region of the TCQW during pumping excitation. At 77 K, at selected excitation intensities, the high-energy tails in the PL spectra of the studied structure corresponded with hot electron temperatures as functions of the energy of emitted photons. The average scattering energy rate of hot electrons in the system was also studied at a lattice temperature of 77 K. The average scattering energy rate of hot electrons obtained from this experimental study was in agreement with the calculated theoretical value.

show abstract

Section: Introductionmentioning

confidence: 99%

PL Spectra and Hot Charge Carrier Phenomena in an Undoped GaAs/AlGaAs Tunnel-Coupled Quantum Well

Jarusirirangsi

Dommelen

Daengngam

2021

Journal of Nanomaterials

View full text Add to dashboard Cite

show abstract

An inclusive theory of the hall mobility of a non-ohmic degenerate ensemble of two-dimensional electrons in a modulation-doped AlGaN/GaN heterostructure at low lattice temperature

Roy,

Bhattacharyya,

Bhattacharya

2024

66th Dae Solid State Physics Symposium

View full text Add to dashboard Cite

A comprehensive study on the Hall mobility of an ohmic ensemble of two-dimensional electrons confined in a quantum well of a heterostructure at low lattice temperatures

2023

View full text Add to dashboard Cite

The characteristic dependence of the Hall mobility upon the temperature of a degenerate ensemble of two-dimensional electrons in a well of heterostructure has been calculated in some broad details, for the ohmic field region, at the low temperatures. Apart from the electronic interactions with the remote ionized impurities and the surface roughness, the study also duly considers some factors which are often ignored for mathematical simplicity. These include, the inelasticity of the electron-phonon collisions and the true phonon distribution. The results thus obtained for heterostructures like AlGaAs/GaAs, AlGaN/GaN and AlInSb/InSb, show that the consideration of the above details significantly changes the overall characteristics, and makes them agree quite well with the experimental data.

show abstract

Energy loss rate and non-ohmic characteristics of a degenerate surface layer of compound semiconductors at low lattice temperatures

Cited by 3 publications

References 13 publications

PL Spectra and Hot Charge Carrier Phenomena in an Undoped GaAs/AlGaAs Tunnel-Coupled Quantum Well

PL Spectra and Hot Charge Carrier Phenomena in an Undoped GaAs/AlGaAs Tunnel-Coupled Quantum Well

An inclusive theory of the hall mobility of a non-ohmic degenerate ensemble of two-dimensional electrons in a modulation-doped AlGaN/GaN heterostructure at low lattice temperature

A comprehensive study on the Hall mobility of an ohmic ensemble of two-dimensional electrons confined in a quantum well of a heterostructure at low lattice temperatures

Contact Info

Product

Resources

About