Energy Loss Rate of Hot Electrons Due to Confined and Interface Optical Phonons in Semiconductor Quantum Wells in Quantizing Magnetic Field

Abstract

The energy loss rate (ELR) of hot electrons in semiconductor quantum wells in quantizing magnetic field is studied using the electron temperature model. Electron interaction with confined LO phonons described by Huang and Zhu, slab mode and guided mode models is considered. The effect of interface modes is also incorporated. Numerical results are given for the GaAs/AlAs quantum well system for the dependence of ELR on magnetic field, electron temperature and the effect of quantum well barrier height. The results are compared with those obtained with the bulk description of LO phonons. The energy relaxation process is dominated by interface modes at lower well widths and by confined modes at higher well widths.

Nonlinear phonon-assisted cyclotron resonance via two-photon process in asymmetrical Gaussian potential quantum wells

“…Therefore, the purpose of the present work is to investigate the combined effects of these quantities on the nonlinear magneto-optical absorption coefficient as well as the half-width at half-maximum (HWHM) in an asymmetric Gaussian potential quantum well via studying the PACR effect [32][33][34][35]. The result is calculated for several different types of electron-phonon scattering [33,[36][37][38]. The effects of hydrostatic pressure and aluminum concentration are taken into account through the dependence of the main input parameters on these quantities.…”