In the study, 4 different p-n pairs were formed for p-n pairs which forming thermoelectric modules, consisting of a combination of 4 different semiconductor materials of type Bi2Te3, Bi0.3Sb1.7Te3, PbSe0.5Te0.5 and Zn4Sb3 used for Thermoelectric Generator that simulated on Matlab/Simulink. Figure A. Structure of a Thermoelectric Module with Load Purpose: In this study, a thermoelectric module design using 4 different p-n type semiconductor material properties is simulated. The electrical output parameters of the thermoelectric generator were investigated with the data sets taken under certain engine conditions. Theory and Methods: Flow diagram of the whole system is presented for the modeled system. The structural properties of the p-n type semiconductor pairs used and the calculations of the thermoelectric generator are given step by step. Results: The results showed that the TEM structure formed by using p: Bi0,3Sb1,7Te3 and n: Bi2Te3 type semiconductors among the p-n semiconductor pairs analyzed under the specified motor operating conditions was determined to be the most appropriate p-n pair combination in terms of the output performance of the TEJ. Conclusion: As a result, the higher electrical output of TEMs created with pn pairs formed from combinations of Bi0,3Sb1,7Te3, PbSe0,5Te0,5 and Zn4Sb3 semiconductor pairs, which are commercially available and used as an alternative to TEMs consisting of only Bi2Te3 based pn pairs offers performance. However, Pb-based semiconductor materials used in TEMs show a performance close to Bi-based semiconductor materials available as commercial products in the market. However, Pb-based semiconductor materials performed lower than Sb-based semiconductor materials. In particular, higher electrical output was achieved with combinations of Bi and Sb based semiconductor material alloys instead of Bi2Te3 based materials.