Energy relaxation of an excited electron gas in quantum wires: Many-body electron-LO-phonon coupling

Zheng, Luyao; Sarma, S. Das

doi:10.1103/physrevb.54.2751

Cited by 15 publications

(12 citation statements)

References 29 publications

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“…We provide a critical qualitative discussion of these various contributions to scattering and comment on the effect of interwell tunneling and structural asymmetry in bilayer quantum wells. (1,1) SPE 12 (1,2) …”

Section: Discussionmentioning

confidence: 99%

“…The solid line that is of finite frequency as q → 0 in Fig. 1(b) is the intersubband-like plasmon mode (1,2). This mode enters the continuum SPE 12 at q ≃ 0.42 ×10 6 cm −1 and should be, in principle, Landau damped.…”

Section: A Coulomb Coupled Bilayers With Interwell Tunnelingmentioning

confidence: 99%

“…In addition to this practical technological motivation arising from QCL, QWIP, and other proposed band-engineered quantum well devices, there is also obvious fundamental reason for studying inelastic Coulomb scattering in 2D quantum well systems. Inelastic electron-electron scattering determines the 2D quasiparticle spectral width, as determined for example in tunneling measurements, through the imaginary part of the electron self-energy function [2].…”

Section: Introductionmentioning

confidence: 99%

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Carrier relaxation due to electron-electron interaction in coupled double quantum well structures

2001

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We calculate the electron-electron interaction induced energy-dependent inelastic carrier relaxation rate in doped semiconductor coupled double quantum well nanostructures within the two subband approximation at zero temperature. In particular, we calculate, using many-body theory, the imaginary part of the full self-energy matrix by expanding in the dynamically RPA screened Coulomb interaction, obtaining the intrasubband and intersubband electron relaxation rates in the ground and excited subbands as a function of electron energy. We separate out the single particle and the collective excitation contributions, and comment on the effects of structural asymmetry in the quantum well on the relaxation rate. Effects of dynamical screening and Fermi statistics are automatically included in our many body formalism rather than being incorporated in an ad-hoc manner as one must do in the Boltzman theory.

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Section: Discussionmentioning

confidence: 99%

Section: A Coulomb Coupled Bilayers With Interwell Tunnelingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Carrier relaxation due to electron-electron interaction in coupled double quantum well structures

2001

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“…However, there are several parameters affecting the power loss of hot electrons: the electron-phonon coupling, electronic screening, hot-phonon and finite-thickness effects. Throughout the years, there has been a large amount of theoretical effort to explain the experimental results for the power loss of electrons in semiconductor bulk and lower dimensional structures, especially GaAs based quantum wells [8][9][10][11][12][13][14][15][16][17].…”

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confidence: 99%

“…We employed the effective electron-temperature model, which assumes T > T L . Taking T L = 0, the power loss per electron is [17] …”

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confidence: 99%

Theoretical investigations on the energy relaxation in twodimensional GaN systems

Taş

Tanatar

2007

Phys. Status Solidi (c)

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We theoretically study the energy relaxation of hot electrons via LO-phonon emission in two-dimensional GaN systems. We employ a model in which electrons and the lattice are in equilibrium separately, and the effective electron temperature is much larger than the lattice temperature. We include the dynamical screening of electrons, electron-phonon interactions reduced phonon self-energy correction, the hot-phonon, and the finite-size effects. The power loss to acoustic phonons is also considered.In the last few years, a great deal of experimental and theoretical attention has focused on the direct, large band gap III-V nitride semiconductors GaN, AlN and InN. The large band gap leads to high breakdown voltages and electric fields, good thermal conductivity, low noise generation, high power and high temperature operation. All of these properties make these structures desirable for electronic and optoelectronic device applications [1][2][3][4][5][6][7]. These devices work mostly under high electric field, which brings about substantial heating and decrease in their performance. For desired efficiency in device applications and good explanation of the experimental results, the electronic processes behind the transport properties of nitrate heterostructures should be understood clearly.The electrons in a bulk or quantum well become energetic (or hot) when a high electric field is applied, and the thermal equilibrium between the electron gas and the lattice is destroyed. The electrons relax by losing their excess energy to the lattice. This process follows several steps. First, the electrons having enough energy emit longitudinal optical (LO) phonons, Then, the emitted LO phonons decay into acoustic phonons and the excess energy drains out to the lattice. Finally, the electron gas and the lattice reach equilibrium separately at different temperatures, T and T L , respectively, coupled only weakly through electron-phonon interaction. In the steady state the input power is equal to the power loss to the lattice. At high electron temperatures the dominant mechanism for energy relaxation is emitting LO phonons. However, there are several parameters affecting the power loss of hot electrons: the electron-phonon coupling, electronic screening, hot-phonon and finite-thickness effects. Throughout the years, there has been a large amount of theoretical effort to explain the experimental results for the power loss of electrons in semiconductor bulk and lower dimensional structures, especially GaAs based quantum wells [8][9][10][11][12][13][14][15][16][17].In order to understand the power loss mechanism of hot electrons in GaN quantum wells, we made a detailed theoretical investigation. We included the dynamical screening of electrons within the finitetemperature random-phase approximation (RPA). Phonon self-energy renormalization due to the electronphonon coupling, hot-phonon effect, impurity and the finite-thickness effect are also considered. In polar semiconductors like GaN the piezoelectric coupling to acoustic phonons is ...

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Quasi-Particle Properties of a One-Dimensional Electron System Interacting with a Short-Range Potential

Tanatar

Demirel

2000

phys. stat. sol. (b)

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We study the quasi-particle properties of a one-dimensional electron gas interacting via a shortrange electron±electron interaction. The electron self-energy is calculated using the leading-order dynamical-screening approximation with (GWG approximation) and without the vertex corrections (GW approximation). We test the reliability of the plasmon-pole approximation against the full self-energy calculations. Energy relaxation rate via longitudinal optical (LO)-phonon emission is also examined to explore the effects of short-range potential. Our results for the quasi-particle properties indicate that an effective short-range interaction can be used as a qualitative model to understand various quantities in a realistic quantum wire with long-range Coulomb interactions.

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Energy relaxation of an excited electron gas in quantum wires: Many-body electron-LO-phonon coupling

Cited by 15 publications

References 29 publications

Carrier relaxation due to electron-electron interaction in coupled double quantum well structures

Carrier relaxation due to electron-electron interaction in coupled double quantum well structures

Theoretical investigations on the energy relaxation in twodimensional GaN systems

Quasi-Particle Properties of a One-Dimensional Electron System Interacting with a Short-Range Potential

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