Energy relaxation of hot carriers in single-wall carbon nanotubes by surface optical phonons of the substrate

Petrov, A. G.; Rotkin, Slava V.

doi:10.1134/s0021364006150124

Cited by 27 publications

(32 citation statements)

References 18 publications

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“…Thermal broadening of the energy distribution is approximately k B T e ≈ 10 meV at T e = 120 K. The resulting energy of ≈ 30 meV is close to the 50 meV predicted threshold energy for the emission of surface polar phonons (SPPs) directly into the SiO 2 substrate. [21][22][23] 23 The difference in I s is likely the result of the differences between this modeled system and our measured sample. In particular, I s is strongly dependent on the tubesubstrate separation.…”

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confidence: 87%

Energy Loss of the Electron System in Individual Single-Walled Carbon Nanotubes

et al. 2010

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We characterize the energy loss of the nonequilibrium electron system in individual metallic single-walled carbon nanotubes at low temperature. Using Johnson noise thermometry, we demonstrate that, for a nanotube with Ohmic contacts, the dc resistance at finite bias current directly reflects the average electron temperature. This enables a straightforward determination of the thermal conductance associated with cooling of the nanotube electron system. In analyzing the temperature- and length-dependence of the thermal conductance, we consider contributions from acoustic phonon emission, optical phonon emission, and hot electron outdiffusion.

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confidence: 87%

Energy Loss of the Electron System in Individual Single-Walled Carbon Nanotubes

et al. 2010

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“…where a q,q ⊥ ,ν is the annihilation operator for the ν-th surface phonon mode (not to be confused with the NT lattice phonons), and an explicit form of V ν k,q,q ⊥ was derived in Ref. [27]:…”

Section: Simulation Approachmentioning

confidence: 99%

An Essential Mechanism of Heat Dissipation in Carbon Nanotube Electronics

et al. 2009

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Excess heat generated in integrated circuits is one of the major problems of modern electronics. Surface phonon-polariton scattering is shown here to be the dominant mechanism for hot charge carrier energy dissipation in a nanotube device fabricated on a polar substrate, such as SiO(2). By use of microscopic quantum models, the Joule losses were calculated for the various energy dissipation channels as a function of the electric field, doping, and temperature. The polariton mechanism must be taken into account to obtain an accurate estimate of the effective thermal coupling of the nonsuspended nanotube to the substrate, which was found to be 0.1-0.2 W/(m x K) even in the absence of the bare phononic thermal coupling.

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“…The interactions of these SPP modes with charged carriers in the conduction channel was first explored in the context of inversion layer of semiconductor-oxide interface [24][25][26] . They have also been studied in other material systems such as carbon nanotubes [27][28][29] , where close proximity between charged carriers and the underlying substrate renders the SPP-phonon scattering more prominent. Similarly, in graphene, SPP was found to limit electronic transport properties [30][31][32][33][34][35][36][37][38][39] .…”

Section: Introductionmentioning

confidence: 99%

Cooling of photoexcited carriers in graphene by internal and substrate phonons

Low¹,

Perebeinos²,

et al. 2012

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We investigate the energy relaxation of hot carriers produced by photoexcitation of graphene through coupling to both intrinsic and remote (substrate) surface polar phonons using the Boltzmann equation approach. We find that the energy relaxation of hot photocarriers in graphene on commonly used polar substrates, under most conditions, is dominated by remote surface polar phonons. We also calculate key characteristics of the energy relaxation process, such as the transient cooling time and steady state carrier temperatures and photocarriers densities, which determine the thermoelectric and photovoltaic photoresponse, respectively. Substrate engineering can be a promising route to efficient optoelectronic devices driven by hot carrier dynamics.

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Energy relaxation of hot carriers in single-wall carbon nanotubes by surface optical phonons of the substrate

Cited by 27 publications

References 18 publications

Energy Loss of the Electron System in Individual Single-Walled Carbon Nanotubes

Energy Loss of the Electron System in Individual Single-Walled Carbon Nanotubes

An Essential Mechanism of Heat Dissipation in Carbon Nanotube Electronics

Cooling of photoexcited carriers in graphene by internal and substrate phonons

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