Articles you may be interested inStructural phase transition and erasable optically memorized effect in layered γ-In2Se3 crystals J. Appl. Phys. 115, 033501 (2014); 10.1063/1.4862184
Model for determination of mid-gap states in amorphous metal oxides from thin film transistorsIt is found that ␥ irradiation of p-InSe and n-InSe͗Sn͘ ͑0.2 and 0.4 mol. % Sn͒ with dose D ␥ = 100 krad results in a considerable change of the parameters of states localized in the band gap: an increase of the density of states localized near the Fermi level and their energy densification, a decrease of the average hopping distance, and an increase of the concentration of deep traps responsible for hopping conductivity. The concentrations of radiation defects in p-InSe and n-InSe͗Sn͘ single crystals are determined as 5.18· 10 17 cm −3 and 2.48· 10 17 -2.71· 10-18-cm −3 , respectively.