Energy states of the cation vacancy in II-VI compounds

Abstract

It is important, when we are concerned with properties of p-type Il-VI compounds, to know the degeneracy coefficient for various charge states of the cation vacancies. W e have calculated, in the frame of a molecular model, the electronic states of the neutral, singly and doubly charged cation vacancy. We show that t h e ground state of a given charged vacancy is different depending on whether s p i m r b i t interaction is smaller or greater than the Coulomb repulsion potential

Large depletion region at the epitaxial n-ZnSe/GaAs heterointerface

“…Finally, interdiffusion of Zn and Ga atoms across the ZnSe/GaAs interface has been observed by several groups using secondary ion mass spectroscopy (SIMS) [13,14]. Zn atoms diffusing into GaAs are incorporated there as acceptors [12] and they leave behind cation vacancies in ZnSe, which can trap up to two electrons each [15]. Ga atoms diffusing into ZnSe would have the opposite effect, but they have been found to have a lower diffusion length and lower areal density than Zn.…”