Energy storage and dielectric properties of a novel Bi1.5MgNb1.5O7-Bi2Mg2/3Nb4/3O7 thin film

Yu, Shihui; Zhang, Chunmei; Wu, Muying; Dong, Helei; Sun, Zheng; Li, Lingxia

doi:10.1016/j.ceramint.2020.08.243

Cited by 13 publications

(1 citation statement)

References 48 publications

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“…These thin films have shown slim P‐E hysteresis loops and interesting ferroelectric and energy storage properties which include: large maximum polarization ( P max ~ 36.97 μC/cm 2 ) and high charge storage density ( P max − P r ~ 32.25 μC/cm 2 ), with an ESD of 40.59 J/cm 3 and an energy conversion efficiency of 61.67% at 2.91 MV/cm. These films have also shown a very low loss tangent of ~0.005 with a high dielectric constant of 158 75 …”

Section: Perovskite‐based Ferroelectric Thin Filmsmentioning

confidence: 99%

Review on energy storage in lead‐free ferroelectric films

Puli

Pradhan

et al. 2022

Energy Storage

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Rapidly developing electronics industry is striving for higher energy-storage capability dielectric capacitors for pulsed power electronic devices. Both high dielectric permittivity and high dielectric breakdown strength are essential properties to meet the desired device performance. However, due to materials limitations and their preparation requirements, there are significant challenges which limit the use of current dielectrics in high-energy storage capacitors. In addition material limitations such as, low dielectric permittivity, low breakdown strength, and high hysteresis loss decrease these materials' energy density and efficiency, restricting potential applications. Thus, a thorough understanding of the implementation, optimization and limitations of ferroelectric, relaxor-ferroelectric, and anti-ferroelectric thin films in high-energy storage dielectric capacitors is an essential and important research topic for the incorporation of these materials in near future applications.

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Section: Perovskite‐based Ferroelectric Thin Filmsmentioning

confidence: 99%

Review on energy storage in lead‐free ferroelectric films

Puli

Pradhan

et al. 2022

Energy Storage

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Enhanced Energy Storage Properties in Paraelectrics via Entropy Engineering

Lan

Meng

Yang

et al. 2023

Advanced Physics Research

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Electrostatic energy storage capacitors based on dielectrics have attracted much attention due to their wide applications in advanced electrical technology and electronic devices. Generally, high energy density is achieved at a high electric field, while conduction loss becomes nonnegligible, which harms practical applications. Here distinctly suppressed leakage current in BaZr0.5Ti0.5O3‐based films by entropy engineering is realized. With increased entropy, the leakage current density decreases by two orders of magnitude at the electric field of 3 MV cm−1, leading to a markedly improved energy efficiency of 87% at an ultrahigh breakdown strength of 8 MV cm−1 in high‐entropy films. Thereby, a high energy density of 51.9 J cm−3 is achieved. This work demonstrates the effectiveness of entropy engineering in improving the breakdown strength of dielectric films and shows great potential in enhancing the energy storage performance of capacitors.

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Effect of argon-oxygen ratio on dielectric and energy storage properties of Ba(Zr0.35Ti0.65)O3 thin films

Sun

et al. 2022

Ceramics International

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Energy storage and dielectric properties of a novel Bi1.5MgNb1.5O7-Bi2Mg2/3Nb4/3O7 thin film

Cited by 13 publications

References 48 publications

Review on energy storage in lead‐free ferroelectric films

Review on energy storage in lead‐free ferroelectric films

Enhanced Energy Storage Properties in Paraelectrics via Entropy Engineering

Effect of argon-oxygen ratio on dielectric and energy storage properties of Ba(Zr0.35Ti0.65)O3 thin films

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