Energy storage properties of low concentration Fe-doped barium strontium titanate thin films

Xie, Juan; Hao, Hua; Yao, Zhonghua; Zhang, Lin; Xu, Qi; Liu, Hanxing; Cao, Minghe

doi:10.1016/j.ceramint.2017.11.218

Cited by 21 publications

(7 citation statements)

References 41 publications

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“…Effects of annealing temperature in a postgrowth RTA process on the microstructures and energy storage characteristics of the STO films were discussed. By adjusting the annealing temperature to 650 °C, a pseudolinear P-E loop with a high energy storage per- [7,16,17,20,22,26,[38][39][40].…”

Section: Discussionmentioning

confidence: 99%

“…Figure 7. Comparison of energy storage performances between the STO film annealed at 650 • C in this work and some previously reported STO-based films deposited on Si substrates[7,16,17,20,22,26,[38][39][40].…”

mentioning

confidence: 88%

“…Apparently, although these above methods can improve energy storage performances of the STO thin films, the complex composition or film structure, as well as the costly single crystalline substrates being used, have inevitably increased the difficulties for practical applications of these film materials [25][26][27][28][29][30]. In addition, as far as we know, there are very few reports on the energy storage properties of pure STO thin films [14].…”

Section: Introductionmentioning

confidence: 99%

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Energy Storage Properties of Sol–Gel-Processed SrTiO3 Films

et al. 2022

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Dielectric films with a high energy storage density and a large breakdown strength are promising material candidates for pulsed power electrical and electronic applications. Perovskite-type dielectric SrTiO3 (STO) has demonstrated interesting properties desirable for capacitive energy storage, including a high dielectric constant, a wide bandgap and a size-induced paraelectric-to-ferroelectric transition. To pave a way toward large-scale production, STO film capacitors were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by the sol–gel method in this paper, and their electrical properties including the energy storage performance were studied as a function of the annealing temperature in the postgrowth rapid thermal annealing (RTA) process. The appearance of a ferroelectric phase at a high annealing temperature of 750 °C was revealed by X-ray diffraction and electrical characterizations (ferroelectric P-E loop). However, this high dielectric constant phase came at the cost of a low breakdown strength and a large hysteresis loss, which are not desirable for the energy storage application. On the other hand, when the RTA process was performed at a low temperature of 550 °C, a poorly crystallized perovskite phase together with a substantial amount of impurity phases appeared, resulting in a low breakdown strength as well as a very low dielectric constant. It is revealed that the best energy storage performance, which corresponds to a large breakdown strength and a medium dielectric constant, is achieved in STO films annealed at 650 °C, which showed a large energy density of 55 J/cm3 and an outstanding energy efficiency of 94.7% (@ 6.5 MV/cm). These findings lay out the foundation for processing high-quality STO film capacitors via the manufacturing-friendly sol–gel method.

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Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

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Energy Storage Properties of Sol–Gel-Processed SrTiO3 Films

et al. 2022

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“…Excessive iron doping at barium strontium titanate (BST) thin films deteriorated energy storage properties of the BST thin films. However, optimized Fe concentrations in BST [Ba 0.7 Sr 0.3 Fe x Ti 1 − x O 3 ( x = 0.008)], resulted in encouraging recoverable ESD of 7 J/cm 3 at 2.4 MV/cm from 5.4 J/cm 3 at 4.5 MV/cm of pure BST films 49 . Recoverable energy density of 13 J/cm 3 was reported on 0.6(BiFeO 3 )‐0.4(SrTiO 3 ) (BFST ~ 400‐nm thick) epitaxial thin films grown on SrRuO 3 (SRO)/{100}/SrTiO 3 (STO) substrate using pulsed laser deposition (PLD) technique, its recoverable energy density was increased from 13 to 17 J/cm 3 , when an ultra‐thin layer of alumina (Al 2 O 3 ) (~6‐nm thick) was deposited on BFST films at the dielectric (electroceramic)‐electrode interface.…”

Section: Perovskite‐based Ferroelectric Thin Filmsmentioning

confidence: 99%

Review on energy storage in lead‐free ferroelectric films

Puli

Pradhan

et al. 2022

Energy Storage

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Rapidly developing electronics industry is striving for higher energy-storage capability dielectric capacitors for pulsed power electronic devices. Both high dielectric permittivity and high dielectric breakdown strength are essential properties to meet the desired device performance. However, due to materials limitations and their preparation requirements, there are significant challenges which limit the use of current dielectrics in high-energy storage capacitors. In addition material limitations such as, low dielectric permittivity, low breakdown strength, and high hysteresis loss decrease these materials' energy density and efficiency, restricting potential applications. Thus, a thorough understanding of the implementation, optimization and limitations of ferroelectric, relaxor-ferroelectric, and anti-ferroelectric thin films in high-energy storage dielectric capacitors is an essential and important research topic for the incorporation of these materials in near future applications.

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“…To design self-powered systems, the energy density of ceramic capacitors must be markedly improved. Various polar materials, including paraelectrics [11][12][13][14] , ferroelectrics [15][16][17][18] , antiferroelectrics [19][20][21][22][23] , and relaxors [24][25][26][27][28] , have been investigated. The following two indices obtained from polarization (P)-electric field (E) properties have been widely used to assess the energy storage performance: a recoverable energy density 𝑈𝑈 rec = ∫ 𝐸𝐸𝐸𝐸𝐸𝐸 𝑃𝑃 max 𝑃𝑃 r and an energy efficiency 𝜂𝜂 = 𝑈𝑈 rec ∫ 𝐸𝐸𝐸𝐸𝐸𝐸 𝑃𝑃 max 𝑃𝑃 0…”

Section: Introductionmentioning

confidence: 99%

Utilizing ferrorestorable polarization in energy storage ceramic capacitors

Matsuo

Utsunomiya

Noguchi

2022

Preprint

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A self-powered system with a long lifetime offers an opportunity to develop a next-generation, standalone Internet of Things. Ceramic capacitors are promising candidates for energy storage components because of their stability and fast charge/discharge capability. Even for state-of-the-art capacitors, the energy density needs to be increased markedly. Improving breakdown electric fields provides a potential solution, but operations at such high fields relying on unchanged dielectric permittivity sacrifice the lifetime to some degree. Here, we report a ferrorestorable polarization engineering capable of enhancing effective permittivity over twice. Our experiments and ab initio calculations demonstrate that a defect dipole composed of Cu3+ and oxygen vacancy in a prototypical ferroelectric BaTiO3 ceramic is coupled with spontaneous polarization. The resultant ferrorestorable polarization delivers an extraordinarily large effective relative permittivity beyond 7,000 with a high energy efficiency up to 89%. Our work paves the way to realizing efficient ceramic capacitors for self-powered applications.

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Energy storage properties of low concentration Fe-doped barium strontium titanate thin films

Cited by 21 publications

References 41 publications

Energy Storage Properties of Sol–Gel-Processed SrTiO3 Films

Energy Storage Properties of Sol–Gel-Processed SrTiO3 Films

Review on energy storage in lead‐free ferroelectric films

Utilizing ferrorestorable polarization in energy storage ceramic capacitors

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