Thin films of europium-doped yttrium oxide (Y 2 O 3 :Eu) were prepared on Si (100) substrates by using a radio frequency (RF) magnetron sputtering. After the deposition, the films were annealed at 1000 o C in an air ambient for 1 hour. X-ray diffraction analysis revealed that the Y 2 O 3 :Eu films had a polycrystalline cubic α-Y 2 O 3 structure. The as-deposited films showed no photoluminescence (PL), which was due to poor crystalline quality of the films. The crystallinity of the Y 2 O 3 :Eu films was significantly improved by annealing. The strong red PL emission was observed from the annealed Y 2 O 3 :Eu films and the highest intensity peak was centered at around 613 nm. This emission peak originated from theF 2 transition of the trivalent Eu ions occupying the C 2 sites in the cubic α-Y 2 O 3 lattice. The broad PL excitation band was observed at wavelengths below 280 nm, which was attributed to the charge transfer transition of the trivalent Eu ion.