Nanocrystal 2011
DOI: 10.5772/17490
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Energy Transfer from Silicon Nanocrystals to Er3+ Ions Embedded in Silicon Oxide Matrix

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Cited by 3 publications
(4 citation statements)
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“…The absence of an emission peak in bulk semiconductor material is due to coupling of the emitting states with lattice vibrations of the extended lattice and is due to a number of dangling bonds which provide traps for nonradiative recombination. 72 Bol and Meijerink 73 observed that a higher degree of polymerization can lead to better surface coverage and can reduce the number of dangling bonds on the surface of NPs, thereby increasing the PL emission. The surfactants are therefore believed to eliminate the surface traps caused by dangling bonds and hence help in maintaining better PL emission.…”
Section: Pl Emissionmentioning
confidence: 99%
“…The absence of an emission peak in bulk semiconductor material is due to coupling of the emitting states with lattice vibrations of the extended lattice and is due to a number of dangling bonds which provide traps for nonradiative recombination. 72 Bol and Meijerink 73 observed that a higher degree of polymerization can lead to better surface coverage and can reduce the number of dangling bonds on the surface of NPs, thereby increasing the PL emission. The surfactants are therefore believed to eliminate the surface traps caused by dangling bonds and hence help in maintaining better PL emission.…”
Section: Pl Emissionmentioning
confidence: 99%
“…Firstly, the increase of Sn concentration reduces the crystallinity of ZTO, as shown in Fig. 2, and atomic disorder in an amorphous compound can produce the defect states causing non-radiative recombination [30,31]. Similarly, Karmakar et al reported that the disorder introduced in a Mn-doped ZnO thin film led to the decrease of crystallinity and PL intensity [30].…”
Section: Effect Of Zto Compositionmentioning
confidence: 97%
“…Interestingly, the nature of these defect emission centers was not reported by Savchyn et al [80,83]. This ambiguity where the energy transfer from the Si-nc to Er 3+ could be due either to the excitonic emissions or the defect emissions, has been further studied to some extent by studies in reference [81]. The study shows that the exciton recombination in Si-nc show higher energy transfer as compared to the defect medicated energy transfer.…”
Section: 321mentioning
confidence: 94%
“…al., it was reported that the emission from the silicon nanocrystal at 810 nm excites the Er 3+ , which in turn gives its characteristic emission at 1540 nm. Since then, there has been many reports on the study of energy transfer from Si-nc to Er 3+ ions [75][76][77][78][79][80][81]and other lanthanide ions like Nd 3+ , Tm 3+ and Yb 3+ [82]. The main aim of these studies initially was to create an efficient silicon based light emitting device [82].…”
Section: 321mentioning
confidence: 99%