Energy transfer to Gd3+ from the self-trapped exciton in ScPO4:Gd3+ — In the case of persistent luminescence

Wang, Chengrui; Liu, Feng; Wang, Xiaojun

doi:10.1016/j.jlumin.2022.119511

Cited by 5 publications

(1 citation statement)

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“…The DTE emission energies of V Sc , O i , Sc P , and P i are resonant with the 6 D J , 6 I J , and 6 P J excited levels of Gd 3+ , enabling energy transfer to the dopant Gd 3+ ions. On the other hand, the STE emission energy (6.91 eV) is resonant with the 6 F J level of Gd 3+ , , which can thus be populated through energy transfer from STE, and then relaxes into the 6 G 7/2 level, from which quantum cutting emission occurs. Based on the above discussions, a plausible mechanism is proposed to understand the NB-UVB PersL in the ScPO 4 :Gd 3+ phosphor, as schematically represented in Figure .…”

Section: Results and Discussionmentioning

confidence: 99%

Narrowband Ultraviolet-B Persistent Luminescence in an Indoor-Lighting Environment through Energy Transfer from Host Excitons to Gd³⁺ Emitters in ScPO₄

et al. 2023

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Narrowband ultraviolet-B (NB-UVB) luminescent materials are characterized by high photon energy, narrow spectral width, and visible-blind emission, thus holding great promise for photochemistry and photomedicine. However, most NB-UVB phosphors developed so far are photoluminescent, where continuous external excitation is needed. Herein, we realize NB-UVB persistent luminescence (PersL) in an indoor-lighting environment by exploiting the interaction between self-trapped/defecttrapped excitons and Gd 3+ emitters in ScPO 4 . The phosphor shows a self-luminescing feature with a peak maximum at 313 nm with a time duration of >24 h after ceasing Xray irradiation, which can be clearly imaged by an UVB camera in a bright environment. Spectroscopic and theoretical approaches reveal that thermo-and photo-stimulations of energies trapped at intrinsic lattice defects followed by energy transfer to Gd 3+ emitters account for the emergence of the afterglow. The present results can initiate more exploration of NB-UVB PersL phosphors for emerging applications in secret optical tagging and phototherapy.

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Section: Results and Discussionmentioning

confidence: 99%

Narrowband Ultraviolet-B Persistent Luminescence in an Indoor-Lighting Environment through Energy Transfer from Host Excitons to Gd³⁺ Emitters in ScPO₄

et al. 2023

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UVB Persistent Luminescence of CaF₂:Gd³⁺ for Radiation Labeling and Tracing

Zhao,

Li,

et al. 2024

Advanced Optical Materials

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Persistent luminescence (PersL) has attracted considerable attention in the last two decades for its potential applications in the fields of emergency indicators, energy‐saving lighting, biomedical imaging, and dynamic anti‐counterfeiting. However, the wavelengths of PersL reported so far usually fall into the visible and near‐infrared range. The preparation of advanced optical materials bearing UV PersL remains elusive. Here the PersL characteristic of CaF2:Gd3+ is systematically studied. After exposure to X‐ray radiation, CaF2:Gd3+ continues to emit UV‐B (UVB) PersL peaking at 313 nm, corresponding to the 6P7/2 → 8S7/2 transition of Gd3+. By virtue of X‐ray photoelectron spectroscopy measurements, the valence variation model is excluded to explain the UVB PersL of CaF2:Gd3+. Finally, it is demonstrated that such UVB PersL of CaF2:Gd3+ can be used for static labeling and dynamic tracing.

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Photostimulated Ultraviolet Luminescence for Anti‐Counterfeiting in Daylight Conditions

Yang,

Yu,

Liu

et al. 2024

Laser & Photonics Reviews

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Photostimulated luminescence in the ultraviolet (PSL‐UV) holds promise for high‐security anti‐counterfeiting applications, especially in brightly lit environments. Despite its potential, research on PSL‐UV is relatively limited. Here, the PSL‐UV properties of a NaYF4:Gd3+ fluoride‐based phosphor is explored, demonstrating its suitability for advanced anti‐counterfeiting purposes. This phosphor effectively captures excitation energy from X‐rays and subsequently emits UV light at 311 nm when stimulated by visible ambient light. Remarkably, the material exhibits exceptional reliability and durability, maintaining effectual PSL‐UV output even after enduring exposure to 100 cycles of ambient light and subsequent decay. Furthermore, ultraviolet imaging experiments highlight the practicality of PSL‐UV for real‐world implementation, presenting a fresh and robust strategy for enhancing security and authentication processes.

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Energy transfer to Gd3+ from the self-trapped exciton in ScPO4:Gd3+ — In the case of persistent luminescence

Cited by 5 publications

References 13 publications

Narrowband Ultraviolet-B Persistent Luminescence in an Indoor-Lighting Environment through Energy Transfer from Host Excitons to Gd³⁺ Emitters in ScPO₄

Narrowband Ultraviolet-B Persistent Luminescence in an Indoor-Lighting Environment through Energy Transfer from Host Excitons to Gd³⁺ Emitters in ScPO₄

UVB Persistent Luminescence of CaF₂:Gd³⁺ for Radiation Labeling and Tracing

Photostimulated Ultraviolet Luminescence for Anti‐Counterfeiting in Daylight Conditions

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Energy transfer to Gd3+ from the self-trapped exciton in ScPO4:Gd3+ — In the case of persistent luminescence

Cited by 5 publications

References 13 publications

Narrowband Ultraviolet-B Persistent Luminescence in an Indoor-Lighting Environment through Energy Transfer from Host Excitons to Gd3+ Emitters in ScPO4

Narrowband Ultraviolet-B Persistent Luminescence in an Indoor-Lighting Environment through Energy Transfer from Host Excitons to Gd3+ Emitters in ScPO4

UV­B Persistent Luminescence of CaF2:Gd3+ for Radiation Labeling and Tracing

Photostimulated Ultraviolet Luminescence for Anti‐Counterfeiting in Daylight Conditions

Contact Info

Product

Resources

About

Narrowband Ultraviolet-B Persistent Luminescence in an Indoor-Lighting Environment through Energy Transfer from Host Excitons to Gd³⁺ Emitters in ScPO₄

Narrowband Ultraviolet-B Persistent Luminescence in an Indoor-Lighting Environment through Energy Transfer from Host Excitons to Gd³⁺ Emitters in ScPO₄

UVB Persistent Luminescence of CaF₂:Gd³⁺ for Radiation Labeling and Tracing