Energy Transfer within Ultralow Density Twin InAs Quantum Dots Grown by Droplet Epitaxy

Abstract

Ultralow density (approximately 10(6)/cm(2)) of twin InAs quantum dot (QD) hybrid structure was grown by a droplet epitaxy technique. The photoluminescence (PL) from ensemble and individual twin InAs QD structures showed a bimodal behavior and an energy transfer between the well-separated (approximately 190 nm) twin QDs, which was supposedly due to the special wetting ring that built the channel for exciton transfer. This research demonstrates a novel approach to fabricate lateral InAs QD pairs as the candidate for a laterally coupled QD molecule.

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

“…The effect has been shown previously in ensemble-PL studies 19 and could be used as a thermal excitation to generate molecular coupling between P e -P h LQD and resonant S e -S h SQD levels in a similar procedure than in the exciton to exciton thermal coupling 48 and transfer. 49 More details concerning excited state assignation and evaluation could be found in Ref. 27.…”

Spectroscopic signatures of many-body interactions and delocalized states in self-assembled lateral quantum dot molecules

“…[10][11][12] The simplest LQDM is a diatomic-like pair of QDs that nucleate from a single site. LQDMs could be the basis of a scalable architecture based on coherent interactions between nearestneighbors, 13,14 but the development and understanding of LQDMs lags behind VQDMs.…”

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

“…In particular, the quantum coupled InAs/GaAs QD pair structures provide an approach to fabricate artificial QD molecules for implementing quantum computation schemes [9][10][11][12][13][14][15]. Generally, the fabrication of quantum coupled InAs/GaAs QD pair structures is implemented by growing two layers of InAs QDs with a thin GaAs spacer to form vertically aligned QD pairs.…”