2015
DOI: 10.1021/acsami.5b05054
|View full text |Cite
|
Sign up to set email alerts
|

Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si

Abstract: The move from dimensional to functional scaling in microelectronics has led to renewed interest toward integration of Ge on Si. In this work, simulation-driven experiments leading to high-quality suspended Ge films on Si pillars are reported. Starting from an array of micrometric Ge crystals, the film is obtained by exploiting their temperature-driven coalescence across nanometric gaps. The merging process is simulated by means of a suitable surface-diffusion model within a phase-field approach. The successful… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

2
43
0

Year Published

2016
2016
2020
2020

Publication Types

Select...
6

Relationship

4
2

Authors

Journals

citations
Cited by 26 publications
(45 citation statements)
references
References 22 publications
2
43
0
Order By: Relevance
“…The suspended film displayed in Figure 6 was obtained [30] by prolongated high-temperature annealing of vertical Ge crystals on Si pillars. Temporal snapshots of the evolution are also displayed, together with a corresponding continuum simulation [31] (panel b).…”
Section: Suspended Filmsmentioning
confidence: 99%
See 1 more Smart Citation
“…The suspended film displayed in Figure 6 was obtained [30] by prolongated high-temperature annealing of vertical Ge crystals on Si pillars. Temporal snapshots of the evolution are also displayed, together with a corresponding continuum simulation [31] (panel b).…”
Section: Suspended Filmsmentioning
confidence: 99%
“…First, local rounding of the facets occurs; then, connection bridges form between neighboring crystals leaving holes, that are finally filled by material flow. Reproduced with permission from[30]. American Chemical Society.…”
mentioning
confidence: 99%
“…In the case of patterned substrates, the same growth conditions as for the UP ones were used; only the thickness of the Ge layer was increased to 8 µm in order to obtain complete coalescence of the Ge patches . Moreover, after the growth and the 6 annealing cycles between 600 and 800°C, the patterned samples underwent a further step of in situ steady annealing at 800°C for 1 h, in order to recover a nearly flat two‐dimensional Ge layer.…”
Section: Resultsmentioning
confidence: 99%
“…We deposited 4 µm of Ge in the case of planar substrates in order to ensure good absorption of sunlight in the Ge junction. The thickness was increased to 8 µm for patterned samples in order to ensure the complete coalescence of the Ge . Post‐growth cyclic thermal annealing from 600 to 800°C was performed in situ to promote dislocation motion, thus reducing their density in the Ge epilayer, in both patterned and UP samples .…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation