2021
DOI: 10.1016/j.micromeso.2021.111302
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Engineering 1/f noise in porous silicon thin films for thermal sensing applications

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Cited by 14 publications
(5 citation statements)
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“…As a result of the measured data, by performing the PMA process under the condition of D 2 forming gas, at 10 atm and 300 • C for 30 min, it is observed that the resistance decreased by about 60% compared to the reference microbolometer, and the TCR values increased up to 48.2%. Therefore, the fabricated a-Si microbolometers treated by the PMA process show TCR values of 2.4~3.5%/K and 1/f noise levels of around 10 −11 /Hz, which are comparable to those of the previously reported literatures [27][28][29]. Moreover, it is confirmed that the noise characteristics are improved in inverse proportion to the patten width of resistance layer.…”
Section: Electrical Characteristics Of the A-si Microbolometers After The Pma Processsupporting
confidence: 84%
See 1 more Smart Citation
“…As a result of the measured data, by performing the PMA process under the condition of D 2 forming gas, at 10 atm and 300 • C for 30 min, it is observed that the resistance decreased by about 60% compared to the reference microbolometer, and the TCR values increased up to 48.2%. Therefore, the fabricated a-Si microbolometers treated by the PMA process show TCR values of 2.4~3.5%/K and 1/f noise levels of around 10 −11 /Hz, which are comparable to those of the previously reported literatures [27][28][29]. Moreover, it is confirmed that the noise characteristics are improved in inverse proportion to the patten width of resistance layer.…”
Section: Electrical Characteristics Of the A-si Microbolometers After The Pma Processsupporting
confidence: 84%
“…Therefore, it is necessary to reduce the aforementioned noises of the a-Si based microbolometers to realize the high-resolution thermal image with high quality [26]. In this respect, P. Sharma et al recently reported TCR values of 6-7%/K along with 1/f noise constant of 10 −12 in a porous Si-thin film with an optimized porosity of 60-75%, by passivating the surface at 600 • C to stabilize the film against atmospheric oxidation [27]. Moreover, there were reports on the results of comparing TCR values and 1/f noise characteristics according to the crystal structure of boron-doped hydrogenated mixed-phase silicon films for the IR device application [28,29].…”
Section: Introductionmentioning
confidence: 99%
“…Porous metals have many applications in daily life and industry, such as filtration, sound absorber [1,2], thermal energy storage [3], electrochemical isolation equipment or biomedical materials [4]. Meanwhile, powder metallurgy techniques are the preferred method of manufacturing porous metals [5].…”
Section: Related Workmentioning
confidence: 99%
“…As for the thermal properties of nanoporous silicon, the most interesting application concerns thermoresistive sensors. Recently, it has been established that porous silicon, in contrast to the bulk material, can solve the problem of the thermal incompatibility of materials, which is met in thermal sensors [ 15 , 16 ]. It becomes possible to tune the desired physical properties of sensors using only porous silicon.…”
Section: Introductionmentioning
confidence: 99%