Step-scheme
(S-scheme) heterojunctions comprising two semiconductors
having two sets of charge carriers at different sites with an outstanding
redox capability have emerged as a prospective tactic for H2O2 production and antibiotic remediation. Herein, 0D/2D
Fe2O3 QD/B-g-C3N4 (F-BN)
was successfully fabricated via in situ nucleation of Fe2O3 quantum dots (FQDs) over boron-doped g-C3N4 (BCN) sheets for H2O2 production
and photo-Fenton amoxicillin (AMX) degradation. Empirical results
demonstrate that the F-BN composite shows a superior catalytic activity
compared to the parent material and the optimized 3F-BN attains the
best activity for H2O2 generation (729 μmol
and solar-to-chemical conversion efficiency (SCC) of 0.12%) and photo-Fenton
AMX degradation (93%) with a “k” of
0.0891 min–1, which is 3.34 and 7.01 times higher
than those of the pristine materials. The outstanding activity could
be attributed to effective separation and utilization of excitons
through the S-scheme transfer pathway. Moreover, charge transfer through
the S-scheme transfer corridor along with continuous Fe3+/Fe2+ shuttling is responsible for the effective photo-Fenton
activity. Additionally, the influence of the variation of experimental
conditions is also studied in detail. The high photocurrent, lower
EIS semicircle, and low PL intensity indicate effective separation
efficiency of e–/h+ in the 3F-BN material.
Furthermore, the scavenging experiment and terephthalic acid (TA),
nitro blue tetrazolium chloride (NBT), and EPR measurements not only
evidence that the generated reactive oxygen species (•OH and •O2
–) participated
in photocatalytic activities but also validate the S-scheme charge-transfer
mechanism which is further confirmed from in-situ XPS analysis.