Engineering Domain-Wall Motion in 
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 Ultrathin Films with Perpendicular Anisotropy Using Patterned Substrates with Subnanometer Step Modulation

Digiacomo, A.; Mantovan, R.; Vernier, N.; Devolder, T.; Garcia, K.; Tallarida, G.; Fanciulli, M.; Lamperti, Alessio; Ocker, B.; Baldi, L.; Mariani, M.; Ravelosona, D.

doi:10.1103/physrevapplied.10.064053

Cited by 4 publications

(3 citation statements)

References 31 publications

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“…[2,3] In this context, one of the most studied systems are Ta/ultrathin CoFeB/ MgO-based heterostructures, where the PMA is obtained via the CoFeB/MgO interface anisotropy. [4][5][6][7] The effective anisotropy constant K eff u , which ultimately determines the thermal stability of a memory cell, can be improved by engineering appropriate CoFeB-based heterostructures. On the other hand, these heterostructures become thermally unstable when lateral dimensions are scaled below 30 nm.…”

Section: Introductionmentioning

confidence: 99%

Compositional Dependence of Epitaxial L1₀‐Mn_xGa Magnetic Properties as Probed by ⁵⁷Mn/Fe and ¹¹⁹In/Sn Emission Mössbauer Spectroscopy

Unzueta

Gunnlaugsson

Mølholt

et al. 2022

Physica Status Solidi (b)

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The magnetic properties of Mn x Ga alloys critically depend on composition x, and the atomic‐scale origin of those dependences is still not fully disclosed. Molecular beam epitaxy has been used to produce a set of Mn x Ga samples (x = 0.7 ÷ 1.9) with strong perpendicular magnetic anisotropy, and controllable saturation magnetization and coercive field depending on x. By conducting 57Mn/Fe and 119In/Sn emission Mössbauer spectroscopy at ISOLDE/CERN, the Mn and Ga site‐specific chemical, structural, and magnetic properties of Mn x Ga are investigated as a function of x, and correlated with the magnetic properties as measured by superconducting quantum interference device magnetometry. Hyperfine magnetic fields of Mn/Fe (either at Mn or Ga sites) are found to be greatly influenced by the local strain induced by the implantation. However, In/Sn probes show clear angular dependence, demonstrating a huge transferred dipolar hyperfine field to the Ga sites. A clear increase of the occupancy of Ga lattice sites by Mn for x > 1 is observed, and identified as the origin for the increased antiferromagnetic coupling between Mn and Mn at Ga sites that lowers the samples’ magnetization. The results shed further light on the atomic‐scale mechanisms driving the compositional dependence of magnetism in Mn x Ga.

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Section: Introductionmentioning

confidence: 99%

Compositional Dependence of Epitaxial L1₀‐Mn_xGa Magnetic Properties as Probed by ⁵⁷Mn/Fe and ¹¹⁹In/Sn Emission Mössbauer Spectroscopy

Unzueta

Gunnlaugsson

Mølholt

et al. 2022

Physica Status Solidi (b)

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“…Therefore, the nucleation of DWs at defects rather than DW pinning is observed in magnetic microwires. In contrast, in thin films, the efficient domain-wall pinning can be engineered by growing ultra-thin magnetic films with perpendicular anisotropy on a patterned substrate exhibiting sub-nanometer steps modulation [134]. The above-provided solutions, allow either annihilation of DWs nucleated on defects or the controlled nucleation of DWs on artificially created inhomogeneities.…”

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confidence: 99%

Review of Domain Wall Dynamics Engineering in Magnetic Microwires

et al. 2020

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The influence of magnetic anisotropy, post-processing conditions, and defects on the domain wall (DW) dynamics of amorphous and nanocrystalline Fe-, Ni-, and Co-rich microwires with spontaneous and annealing-induced magnetic bistability has been thoroughly analyzed, with an emphasis placed on the influence of magnetoelastic, induced and magnetocrystalline anisotropies. Minimizing magnetoelastic anisotropy, either by the selection of a chemical composition with a low magnetostriction coefficient or by heat treatment, is an appropriate route for DW dynamics optimization in magnetic microwires. Stress-annealing allows further improvement of DW velocity and hence is a promising method for optimization of DW dynamics in magnetic microwires. The origin of current-driven DW propagation in annealing-induced magnetic bistability is attributed to magnetostatic interaction of outer domain shell with transverse magnetization orientation and inner axially magnetized core. The beneficial influence of the stress-annealing on DW dynamics has been explained considering that it allows increasing of the volume of outer domain shell with transverse magnetization orientation at the expense of decreasing the radius of inner axially magnetized core. Such transverse magnetic anisotropy can similarly affect the DW dynamics as the applied transverse magnetic field and hence is beneficial for DW dynamics optimization. Stress-annealing allows designing the magnetic anisotropy distribution more favorable for the DW dynamics improvement. Results on DW dynamics in various families of nanocrystalline microwires are provided. The role of saturation magnetization on DW mobility improvement is discussed. The DW shape, its correlation with the magnetic anisotropy constant and the microwire diameter, as well as manipulation of the DW shape by induced magnetic anisotropy are discussed. The engineering of DW propagation through local stress-annealing and DW collision is demonstrated.

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“…In Pt/Co/Pt films, for example, the values of H dep can be more than one order of magnitude higher 2,4,5 . Due to this low bulk pinning potential the DW dynamics can be easily controlled even in full films by artificial pinning imposed through homogeneous material engineering processes, like light ion irradiation [9][10][11] or pre-patterned substrates 12 . Defects generated through micro/nanostructuring can also have a great impact in pristine materials.…”

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confidence: 99%

Magnetic domain wall curvature induced by wire edge pinning

Diez

Ummelen

Jeudy

et al. 2020

Applied Physics Letters

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In this study, we report on the analysis of the magnetic domain wall (DW) curvature due to magnetic field induced motion in Ta/CoFeB/MgO and Pt/Co/Pt wires with perpendicular magnetic anisotropy. In wires of 20 μm and 25 μm, a large edge pinning potential produces the anchoring of the DW ends to the wire edges, which is evidenced as a significant curvature of the DW front as it propagates. As the driving magnetic field is increased, the curvature reduces as a result of the system moving away from the creep regime of DW motion, which implies a weaker dependence of the DW dynamics on the interaction between the DW and the wire edge defects. A simple model is derived to describe the dependence of the DW curvature on the driving magnetic field and allows us to extract the parameter σE, which accounts for the strength of the edge pinning potential. The model describes well the systems with both weak and strong bulk pinning potentials like Ta/CoFeB/MgO and Pt/Co/Pt, respectively. This provides a means to quantify the effect of edge pinning induced DW curvature on magnetic DW dynamics.

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Engineering Domain-Wall Motion in Co−Fe−B/MgO Ultrathin Films with Perpendicular Anisotropy Using Patterned Substrates with Subnanometer Step Modulation

Cited by 4 publications

References 31 publications

Compositional Dependence of Epitaxial L1₀‐Mn_xGa Magnetic Properties as Probed by ⁵⁷Mn/Fe and ¹¹⁹In/Sn Emission Mössbauer Spectroscopy

Compositional Dependence of Epitaxial L1₀‐Mn_xGa Magnetic Properties as Probed by ⁵⁷Mn/Fe and ¹¹⁹In/Sn Emission Mössbauer Spectroscopy

Review of Domain Wall Dynamics Engineering in Magnetic Microwires

Magnetic domain wall curvature induced by wire edge pinning

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Engineering Domain-Wall Motion in Co−Fe−B/MgO Ultrathin Films with Perpendicular Anisotropy Using Patterned Substrates with Subnanometer Step Modulation

Cited by 4 publications

References 31 publications

Compositional Dependence of Epitaxial L10‐MnxGa Magnetic Properties as Probed by 57Mn/Fe and 119In/Sn Emission Mössbauer Spectroscopy

Compositional Dependence of Epitaxial L10‐MnxGa Magnetic Properties as Probed by 57Mn/Fe and 119In/Sn Emission Mössbauer Spectroscopy

Review of Domain Wall Dynamics Engineering in Magnetic Microwires

Magnetic domain wall curvature induced by wire edge pinning

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Product

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Compositional Dependence of Epitaxial L1₀‐Mn_xGa Magnetic Properties as Probed by ⁵⁷Mn/Fe and ¹¹⁹In/Sn Emission Mössbauer Spectroscopy

Compositional Dependence of Epitaxial L1₀‐Mn_xGa Magnetic Properties as Probed by ⁵⁷Mn/Fe and ¹¹⁹In/Sn Emission Mössbauer Spectroscopy