Engineering of carrier localization in BGaAs SQW for novel intermediate band solar cells: Thermal annealing effect

Hidouri, Tarek; Biswas, Mahitosh; Mal, Indranil; Nasr, Samia; Chakrabarti, Subhananda; Samajdar, Dip Prakash; Saidi, F.

doi:10.1016/j.solener.2020.02.032

Cited by 13 publications

(5 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore k •p models able to finely describe bands relevant for devices operation, with a complete set of material parameters, are desired. Furthermore, some of III-V semiconductor compounds that are not completely parametrized (such as boron pnictides) gained much attention recently in the field of optoelectronic devices [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Invariant expansion of the 30-band k.p model and its parameters for III-V compounds

Gawarecki,

Scharoch,

Wiśniewski

et al. 2022

Preprint

View full text Add to dashboard Cite

In this work we derive a ready-to-use symmetry invariant expansion of the full-zone 30-band k•p Hamiltonian for the T d point group. In order to find respective parameters, the band structures of III-V materials were calculated within a state-of-the-art Density Functional Theory (DFT) approach and used next as targets to adjust the k•p bands. A satisfactory agreement of the k•p model with the DFT band structures, for all the tested zinc blende III-V semiconductors, has been achieved. Values of many of the parameters have not been known so far. We also compare the fitted k • p parameters with the values calculated using momentum matrix elements obtained directly from the DFT.

show abstract

Section: Introductionmentioning

confidence: 99%

Invariant expansion of the 30-band k.p model and its parameters for III-V compounds

Gawarecki,

Scharoch,

Wiśniewski

et al. 2022

Preprint

View full text Add to dashboard Cite

show abstract

“…To date, only photoluminescence (PL) spectroscopy has been applied to study the temperature evolution of optical properties of boron-based structures-BGaAs/GaAs epilayers [7,10,13,20,21], BGaAs/GaAs single quantum wells (SQWs) [22,23], and BInGaAs/GaAs SQWs [24]. In all of these works, the authors reported the S-shape temperature dependence of PL peak energy, which is typical for highly mismatched alloys (HMAs) [25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP

Kopaczek¹,

Dybała²,

Zelewski³

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

BGaAs layers with boron concentrations of 4.1%, 7.4%, and 12.1% are grown by molecular beam epitaxy on a GaP substrate and studied by optical absorption and photoreflectance (PR) spectroscopy with both temperature and hydrostatic pressure dependence. The direct optical transitions from the bands composing the valence band—namely heavy-hole, light-hole, and spin–orbit split-off—to the conduction band are clearly observed in the PR spectra. For the abovementioned optical transitions, their temperature dependencies are obtained in the range from 20 K to 300 K, and analyzed by Varshni and Bose–Einstein relations. Furthermore, the BGaAs alloys are also studied with hydrostatic pressure up to ∼18 kbar, revealing pressure coefficients of direct optical transitions. The obtained results are discussed within the framework of the band anticrossing model and chemical trends.

show abstract

“…Highly mismatched alloys (HMA) have attracted great attention owing to their new potential application in bandgap engineering, and related optoelectronic integration. 1,2 Specifically, BGaAs offer a new possibility in device applications such as square quantum wells, 3 intermediate band solar cells, 4 and photonic device applications. 5 This novel ternary alloy is a combination of two binary alloys, GaAs and BAs, lattice-matched to 16%.…”

Section: Introductionmentioning

confidence: 99%

“…17,18 However, elements in MOCVD such as boron have the major disadvantage of being dangerous to handle, e.g., diborane and trimethylboron are highly flammable and highly toxic. 4 Recently, Hidouri et al 3,4 studied the growth of a BGaAs square quantum well for photonic device application and intermediate-band solar cells. They mainly reported surface rugosity and variable size study using thermal treatment, deep level transition, and engineering of carrier localization in BGaAs/GaAs SQWs.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Investigation of BGaAs/GaAs for Optoelectronic Device Applications

Sharma

2020

Journal of Elec Materi

View full text Add to dashboard Cite

Boron dopant incorporation into host GaAs material to form a novel BGaAs semiconductor has been studied using a 10-band kp model. This model allows us to calculate the electronic band structure along the crystallographic direction. So, from the obtained E-k relation, we calculate the carrier effective mass, intrinsic carrier concentration, and x = 0 (GaAs) are in good agreement with previously reported literature. The intrinsic carrier concentration variation is seen as monotonic with boron composition. On the other hand, the composition-dependent Debye temperature observed reduction along with symmetry directions, K by 1.23/%B, R by À 2.33/%B, and D by À 3.52/%B, which leads to the lower stability of crystalline BGaAs alloy. In addition, the interband absorption coefficient as a function of photon energy shows nonmonotonic dependence with fundamental absorption observed at 1.39 eV. Whereas, in the case of quantum well, the optical gain spectrum peak is blueshifted with the density of injected carriers. Hence, this study provides beneficial guidance in the interpretation of applications such as solar cells, optical modulators, multiple QWs.

show abstract

Engineering of carrier localization in BGaAs SQW for novel intermediate band solar cells: Thermal annealing effect

Cited by 13 publications

References 36 publications

Invariant expansion of the 30-band k.p model and its parameters for III-V compounds

Invariant expansion of the 30-band k.p model and its parameters for III-V compounds

Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP

Theoretical Investigation of BGaAs/GaAs for Optoelectronic Device Applications

Contact Info

Product

Resources

About