2015
DOI: 10.1109/ted.2015.2449665
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Engineering of Flexo- and Gravure-Printed Indium–Zinc-Oxide Semiconductor Layers for High-Performance Thin-Film Transistors

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Cited by 17 publications
(6 citation statements)
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“…[152] On the other hand, the preparation of short channels in POFETs, and their utilization in high-speed flexible circuits, requires the use of high-cost and sophisticated methods, such as nanoimprint lithography, gravure printing, and flexography. [229][230][231] Considering this aspect, the VOFET technology seems more feasible since it offers a low-cost solution without compromising the device performance. Moreover, VOFETs can be used to easily produce large-area ICs using printing techniques.…”
Section: Discussion and Comparison Between Pofet-and Vofet-based Flex...mentioning
confidence: 99%
See 1 more Smart Citation
“…[152] On the other hand, the preparation of short channels in POFETs, and their utilization in high-speed flexible circuits, requires the use of high-cost and sophisticated methods, such as nanoimprint lithography, gravure printing, and flexography. [229][230][231] Considering this aspect, the VOFET technology seems more feasible since it offers a low-cost solution without compromising the device performance. Moreover, VOFETs can be used to easily produce large-area ICs using printing techniques.…”
Section: Discussion and Comparison Between Pofet-and Vofet-based Flex...mentioning
confidence: 99%
“…To this end, various approaches based on nanoimprint lithography, gravure, and flexography have been developed. [229][230][231] Although such techniques yield transistor channel lengths of less than 10 µm, they require prepatterned fine microstructures on imprinting rollers or plates, and thus they are more suited for very large-scale manufacturing. On the other hand, the fabrication of OFETs in a vertical architecture (viz.…”
Section: Application In Flexible Logic Gates Inverters and Oscillatorsmentioning
confidence: 99%
“…15,16 Furthermore, high carrier mobility was also revealed in layered MOs, e.g., B1000 cm 2 V À1 s À1 for MoO 3 flakes, 16 comparable to that of bulk silicon and 2D phosphorene. 4,17 Major advances of layered metal oxide films in electronic applications have already been achieved, including multigate FETs, 8,18 gas sensors, 18 p-n junctions and complementary circuits, 19,20 printable metal oxide electronics technology [21][22][23] and flat panel displays. 7,24 These findings and technological advancements indicate that the layered MOs represent an important class of 2D materials with great potential in cutting-edge electronics and optoelectronics.…”
Section: Introductionmentioning
confidence: 99%
“… 29 For example, literature describes gravure printing as a good candidate for thin film production in electronics as it allows high throughput, high control of film characteristics and provides the opportunity to print well-defined multiple layers. 30 With respect to production of complex mesoporous film architectures, gravure printing bares the potential to generate more homogeneous films in much shorter production time as compared to established EISA using dip- or spin-coating and ink-jet printing. In addition, standardization and automation of the film preparation process as well as complex film architecture fabrication should be relatively easy.…”
Section: Introductionmentioning
confidence: 99%