Engineering of Germanium Tunnel Junctions for Optical Applications

Koerner, Roman; Fischer, I. A.; Schwarz, Daniel; Clausen, Caterina J.; Hoppe, Niklas; Schulze, Jörg

doi:10.1109/jphot.2018.2818662

Cited by 4 publications

(6 citation statements)

References 54 publications

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“…Five years after the first design paper, the first electrically-pumped, engineered Ge-on-Si laser was demonstrated [18] with a net optical gain remarkably larger than the original theoretical prediction. A net gain >500 cm −1 was observed from the direct gap transition of 0.2% tensile strained Ge with n4 × 10 19 cm −3 doping.…”

Section: Emerging Technologies Inmentioning

confidence: 98%

“…The ongoing research in this direction is focused on the more promising direct bandgap emission from band-engineered Ge and GeSn. The first electrically pumped Ge lasers at room temperature was reported in 2012 [18] , followed by the most recent advance showing ~10-50 × threshold current density re-duction via tunneling injection into the direct conduction valley [19] . The first optically pumped GeSn laser was demonstrated in 2015 [20] , but still limited to low operation temperatures up to 180 K so far [21] .…”

Section: Development and Challenges Of Active Devices In Si Photonicsmentioning

confidence: 99%

“…Based on the same DH device design structure, the first electrically-pumped laser with Fabry-Perot cavity was demonstrated in 2012 [18] . To achieve the n-type doping level of >4× 10 19 cm −3 , delta-doping plus drive-in diffusion method was adopted without deteriorating the material quality [49] .…”

Section: ≪ 10mentioning

confidence: 99%

“…Using modeling parameters that well fit the L-I curve in Ref. [18], they found that the threshold current density can be decreased by 20 × with optim- ized device structure and cavity design. Assuming a defect-limited carrier lifetime of 100 ns, a wall-plug efficiency of 15% and slope efficiency of 24% at 1 mW output is predicted, where the threshold current density of 2.8 kA/cm 2 is comparable to III-V DH lasers.…”

Section: ≪ 10mentioning

confidence: 99%

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Emerging technologies in Si active photonics

Wang

Liu

2018

J. Semicond.

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Silicon photonics for synergistic electronic–photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro-optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronicSilicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro–optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronic–photonic integration with performance inaccessible from conventional Si photonics technologies-photonic integration with performance inaccessible from conventional Si photonics technologies.

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Section: Emerging Technologies Inmentioning

confidence: 98%

Section: Development and Challenges Of Active Devices In Si Photonicsmentioning

confidence: 99%

Section: ≪ 10mentioning

confidence: 99%

Section: ≪ 10mentioning

confidence: 99%

See 2 more Smart Citations

Emerging technologies in Si active photonics

Wang

Liu

2018

J. Semicond.

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“…Indeed, the decreasing rate of Γ valley with strain is faster than that of L valleys, resulting in a direct band material with a biaxial tensile of ~2% [1][2][3]. So the band-engineered Ge may provide promising routes for light sources in the CMOS-compatible optoelectronic integrated circuits (OEICs) [4][5][6][7]. To realize real Ge lasers, a modest strain value can be combined with n-type doping to compensate the remaining energy difference between Γ and L valleys, which have been demonstrated under both optical and electrical pumping [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Enhanced indirect-to-direct inter-valley scattering in germanium under tensile strain for improving the population of electrons in direct valley

Huang

Zheng

Xie

et al. 2018

J. Phys.: Condens. Matter

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A theoretical model is proposed to analyze the inter-valley electron transferring between direct Γ and indirect L valleys, which sheds light on the electron conduction dynamics in (0 0 1) tensile strained Ge. Inter-valley scattering is included to calculate average scattering time between Γ and L valleys based on a time-dependent Hamiltonian describing the electronphonon interaction. Numerical results indicate that enhanced indirect-to-direct inter-valley scattering and reduced direct-to-indirect inter-valley scattering are reliable by introducing tensile strain in Ge material. The population ratio of electrons in Γ and L valleys in strained Ge will increase one to two orders of magnitude compared to the model without the inter-valley scattering. The results offer fundamental understanding of phonon engineering for further improvement of performance in strained germanium light sources.

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