Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate

Lee, S.; Winslow, M.; Grein, C. H.; Kodati, Sri Harsha; Jones, Andrew; Fink, D. R.; Das, Pankaz; Hayat, Majeed M.; Ronningen, T. J.; Campbell, Joe C.; Krishna, Sanjay

doi:10.1038/s41598-020-73810-w

Cited by 17 publications

(7 citation statements)

References 39 publications

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“…The band structures used within the Monte Carlo transport simulation were calculated by the 14-band superlattice 𝑲 ⋅ 𝒑 formalism described in Flatté et al (1996) 9 , which applies Bloch's theorem to the periodicity of the superlattice using an envelope-function approach. This method has had recent success in modeling III-V SLs and quaternary alloys 10 , making it a suitable approach for this study. These band structures are stored as a table of discrete values within the Brillouin zone (BZ) representing a mesh with a spacing of Δ𝐾 𝑖 = 0.002 Å ≈ 0.001 Bohr −1 , with 𝑖 denoting the direction.…”

Section: Band Structuresmentioning

confidence: 99%

Material optimization for extended short-wavelength and mid-wavelength infrared avalanche photodiodes

Tempel,

Winslow,

Kodati

et al. 2023

Quantum Sensing and Nano Electronics and Photonics XIX

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Section: Band Structuresmentioning

confidence: 99%

Material optimization for extended short-wavelength and mid-wavelength infrared avalanche photodiodes

Tempel,

Winslow,

Kodati

et al. 2023

Quantum Sensing and Nano Electronics and Photonics XIX

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“…Table 3 presents SWIR [ 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 ], MWIR [ 45 , 46 , 47 , 48 , 49 , 50 ] (PIN, SAM and SACM) state-of-art and LWIR, λ ~ 8 μm (230 K) HgCdTe SAM APDs based devices to include maximum gain ( M ), impact ionization ratio ( k ), excess noise factor F ( M ) and dark current mostly at M = 10. As presented, the majority of the published papers corresponds to the T = 300 K and SWIR range.…”

Section: Comparison Of λ ~ 8 μM (230 K) Hgcdte Ver...mentioning

confidence: 99%

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

Kopytko

Sobieski

Gawron

et al. 2022

Sensors

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The trend related to reach the high operating temperature condition (HOT, temperature, T > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently. That is directly related to the attempts to reduce the IR detector size, weight, and power dissipation (SWaP) conditions. The room temperature avalanche photodiodes technology is well developed in short IR range (SWIR) while devices operating in mid-wavelength (MWIR) and long-wavelength (LWIR) require cooling to suppress dark current due to the low energy bandgap. The paper presents research on the potential application of the HgCdTe (100) oriented and HgCdTe (111)B heterostructures grown by metal-organic chemical vapor deposition (MOCVD) on GaAs substrates for the design of avalanche photodiodes (APDs) operating in the IR range up to 8 µm and under 2-stage TE cooling (T = 230 K). While HgCdTe band structure with molar composition xCd < 0.5 provides a very favorable hole-to-electron ionization coefficient ratio under avalanche conditions, resulting in increased gain without generating excess noise, the low level of background doping concentration and a low number of defects in the active layer is also required. HgCdTe (100) oriented layers exhibit better crystalline quality than HgCdTe (111)B grown on GaAs substrates, low dislocation density, and reduction of residual defects which contribute to a background doping within the range ~1014 cm–3. The fitting to the experimentally measured dark currents (at T = 230 K) of the N+-ν-p-P+ photodiodes commonly used as an APDs structure allowed to determine the material parameters. Experimentally extracted the mid-bandgap trap concentrations at the level of 2.5 × 1014 cm−3 and 1 × 1015 cm−3 for HgCdTe (100) and HgCdTe (111)B photodiode are reported respectively. HgCdTe (100) is better to provide high resistance, and consequently sufficient strength and uniform electric field distribution, as well as to avoid the tunneling current contribution at higher bias, which is a key issue in the proper operation of avalanche photodiodes. It was presented that HgCdTe (100) based N+-ν-p-P+ gain, M > 100 could be reached for reverse voltage > 5 V and excess noise factor F(M) assumes: 2.25 (active layer, xCd = 0.22, k = 0.04, M = 10) for λcut-off = 8 μm and T = 230 K. In addition the 4-TE cooled, 8 μm APDs performance was compared to the state-of-the-art for SWIR and MWIR APDs based mainly on III-V and HgCdTe materials (T = 77–300 K).

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“…APDs designed with narrow bandgap materials can have high tunneling current, significantly limiting sensitivity of the APDs. Implementing a separate absorption, charge, and multiplication (SACM) architecture can tackle the tunneling current from narrow band gap material (absorption layer) while increasing the gain in the multiplication layer [13]. The absorption region of the SACM structure is made with narrow bandgap semiconductors such as InGaAs/InAlSb on InP [14] or InGaAs/GaAsSb on InP [11].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Zn-diffusion in 2-micron InGaAs/GaAsSb superlattice planar diodes using atomic layer deposition of ZnO

Muduli,

Schwartz,

Gajowski

et al. 2023

Infrared Technology and Applications XLIX

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Sensing and imaging applications such as light detection and ranging (LiDAR) require a receiver with highly sensitive photodetectors such as avalanche photodiodes (APDs), which have high gain and speed. Conventionally, APDs use mesa structures that limit device scaling due to increased surface leakage current at smaller sizes. Planar-architectured APDs address high surface leakage current by reducing the exposed surface of the devices. They also eliminate complicated mesa fabrication steps such as mesa etching and passivation. Fabrication of APDs with planar architecture conventionally uses processes such as ion-implantation, which can damage the epitaxially-grown material, and metal organic chemical vapor deposition (MOCVD), which can be expensive and time-consuming. In this paper, we assess an alternative fabrication process to make APDs using Zn diffusion into epitaxially-grown material stacks through atomic layer deposition (ALD) of ZnO. In particular, we have explored Zn diffusion in epitaxially grown type-II InGaAs/GaAsSb superlattice on InP substrates. ZnO was grown with various thicknesses on the epitaxial stack using ALD, and the Zn was diffused into the stack using a diffusion furnace under forming gas. The effects of the diffusion process were investigated using various characterization techniques, including x-ray diffraction, and secondary ion mass spectroscopy. The optimized Zn-diffusion process is then used to make planar diodes. Further optimization of this diffusion process may lead to a rapid, manufacturable, and cost-effective method of developing planar APDs.

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Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate

Cited by 17 publications

References 39 publications

Material optimization for extended short-wavelength and mid-wavelength infrared avalanche photodiodes

Material optimization for extended short-wavelength and mid-wavelength infrared avalanche photodiodes

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

Investigation of Zn-diffusion in 2-micron InGaAs/GaAsSb superlattice planar diodes using atomic layer deposition of ZnO

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