Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing

Ismail, Muhammad; Kim, Sunghun; Rasheed, Maria; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun

doi:10.1016/j.jallcom.2024.175411

Journal of Alloys and Compounds

2024

DOI: 10.1016/j.jallcom.2024.175411

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Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing

Muhammad Ismail,

Sunghun Kim,

Maria Rasheed

et al.

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Cited by 3 publications

References 82 publications

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Investigation of the TaO unipolar switching memory on high efficiency computing

Du,

Ji,

Dong

et al. 2025

Journal of Alloys and Compounds

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Investigation of the TaO unipolar switching memory on high efficiency computing

Du,

Ji,

Dong

et al. 2025

Journal of Alloys and Compounds

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Emerging materials for resistive switching memories: Prospects for enhanced sustainability and performance for targeted applications

Loizos,

Rogdakis,

Parambil

et al. 2024

APL Energy

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Resistive switching (RS) memories are novel devices that have attracted significant attention recently in view of their potential integration in deep neural networks for intense big data processing within the explosive artificial intelligence era. While oxide- or silicon-based memristive devices have been thoroughly studied and analyzed, there are alternative material technologies compatible with lower manufacturing cost and less environmental impact exhibiting RS characteristics, thus providing a versatile platform for specific in-memory computing and neuromorphic applications where sustainability is a priority. The manufacturing of these emerging RS technologies is based on solution-processed methods at low temperatures onto flexible substrates, and in some cases, the RS active layer is composed of natural, environmentally friendly materials replacing expensive deposition methods and critical raw and toxic materials. In this Perspective, we provide an overview of recent developments in the field of solution-processed and sustainable RS devices by providing insights into their fundamental properties and switching mechanisms, categorizing key figures of merit while showcasing representative use cases of applications of each material technology. The challenges and limitations of these materials for practical applications are analyzed along with suggestions to resolve these pending issues.

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Reservoir computing and advanced synaptic plasticity of sputter-deposited ZnO memristors with controllable threshold and nonvolatile switching behavior

Ismail,

Seo,

Rasheed

et al. 2024

The Journal of Chemical Physics

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This study presents an ITO/ZnO/ITO/Si memristor fabricated via reactive sputtering for use in advanced analog synaptic plasticity and reservoir computing (RC) systems. The proposed device exhibited stable threshold and nonvolatile switching characteristics by effectively controlling the current compliance (ICC) limit. Multilevel data storage was achieved through controlled multistate switching via reset-stop voltage and ICC. X-ray diffraction analysis confirmed the formation of a polycrystalline ZnO film with a 12:8 oxygen-to-argon ratio, which facilitated the generation of oxygen-vacancy conductive filaments. The memristor effectively replicated key synaptic characteristics such as long-term potentiation, long-term depression, spike-amplitude/width-dependent plasticity, spike-rate-dependent plasticity, and the transition from short-term to long-term memory. The RC system processed binary 4-bit codes and recognized different digits, achieving 98.84% accuracy in handwritten digit recognition using a convolutional neural network simulation, highlighting its potential for efficient image processing applications.

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Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing

Cited by 3 publications

References 82 publications

Investigation of the TaO unipolar switching memory on high efficiency computing

Investigation of the TaO unipolar switching memory on high efficiency computing

Emerging materials for resistive switching memories: Prospects for enhanced sustainability and performance for targeted applications

Reservoir computing and advanced synaptic plasticity of sputter-deposited ZnO memristors with controllable threshold and nonvolatile switching behavior

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