Engineering oxygen vacancies of 2D WO3 for visible-light-driven benzene hydroxylation with dioxygen

Chen, Tao; Ma, Fangpei; Chen, Zhe; Xie, Menglin; Li, Ting; Zhou, Yu; Wang, Jun

doi:10.1016/j.cej.2023.143666

Cited by 18 publications

(5 citation statements)

References 69 publications

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“…Finally, the TEs ITO of devices 1, 2, 3, and 4 are removed by ion etching and then measured by XPS, and the W 4f and O 1s core level spectra are shown in Figure a–e, respectively. The indicated peak locations in the figures are consistent with those in refs − . The content of V O 2+ (nonlattice oxygen) is 25.08% of the WO 3 at the ITO/WO 3 interface of device 1, as exhibited in Figure b, and the content of V O 2+ of the device 2 is 24.86% (Figure c is almost the same as that in device1).…”

Section: Resultssupporting

confidence: 87%

All-Optically Regulated ITO/Cu₂O/WO₃/ITO Memristor for Optoelectronic Neuromorphic Computing

Wu,

Tseng

2024

ACS Appl. Electron. Mater.

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Optoelectronic memristors are becoming increasingly attractive compared to traditional electrical memristors because they can effectively integrate the benefits of both photonics and electronics. However, the inability to reversibly tune the conductance with light has significantly hindered the development of optoelectronic neuromorphic computing. In this work, all-optically regulated resistive switching characteristics are demonstrated in the CMOS process-compatible ITO/ Cu 2 O/WO 3 /ITO optoelectronic memristor. The device exhibits an average transmittance of 70.14% under visible light. After electroforming, it achieves stable bipolar analogue switching, data retention beyond 10 7 s, and endurance of 10 6 cycles. An obvious increase in current is noticeable under 405 or 532 nm wavelength light irradiation, and the current decreases under 633 nm wavelength light irradiation. The light-tuned range is in μA. The synaptic plasticity learning behavior can be emulated in this memristor by electrical or optical stimulation. The learning, forgetting, erasure, and recovery processes of artificial intelligence are successfully implemented. Furthermore, based on the optical or electrical regulation of the conductances, the neural network simulation for supervising learning presents an online learning pattern recognition, and the accuracies can be achieved at 89.96 and 93.03% for optical and electric spikes, respectively. These results suggest that this memristor has high potential for optoelectronic neuromorphic computing applications.

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Section: Resultssupporting

confidence: 87%

All-Optically Regulated ITO/Cu₂O/WO₃/ITO Memristor for Optoelectronic Neuromorphic Computing

Wu,

Tseng

2024

ACS Appl. Electron. Mater.

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“…S25†). 20,57,58 Theoretical calculations using density functional theory (DFT) presented the more thermodynamically favorable adsorption of OH* on the Ni sites of NiMoS x –NH 2 , with a lower adsorption energy of −2.87 eV, than NiMoS x (−2.63 eV) (Fig. 3g), reflecting the enhanced OH* adsorption after the amino modification.…”

Section: Resultsmentioning

confidence: 99%

Amino-tethered Ni₃S₂/MoS₂ heterojunction for coupling electrochemical 5-hydroxymethylfurfural oxidation with 4-nitrophenol hydrogenation

Chen,

Li,

et al. 2024

J. Mater. Chem. A

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“…The XPS O 1s analysis for CeO 2 and BM-CeO 2 showed a relatively high ratio between adsorbed oxygen and total oxygen (O ads /O total ) for BM-CeO 2 . It is generally accepted that oxygen molecules prefer to be adsorbed on oxygen vacancy sites. , Therefore, a higher O ads /O total value indicated that more oxygen molecules were adsorbed and then more oxygen vacancies existed. Combined with the above characterization results, it was confirmed that ball milling induced the improvement of oxygen vacancy on the surface of CeO 2 , which facilitated the catalytic degradation of TBP and P immobilization.…”

Section: Resultsmentioning

confidence: 99%

Treatment of Organophosphorus Esters Waste by CeO₂: Efficient Degradation with Simultaneous Phosphorus Immobilization

Wang,

Zheng,

Tong

et al. 2023

Ind. Eng. Chem. Res.

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Organophosphorus esters (OPEs) are important chemicals functioning as extractants, plasticizers, flame retardants, solvents, additives, etc., and are also recognized as hazardous organic liquids generated from industrial processes. Herein, we developed a CeO2-catalyzed degradation with simultaneous phosphorus immobilization technology to treat typical OPE solvents. Under the investigated reaction conditions of a temperature of 180 °C, a reaction time of 3 h, and a dosage of ball-milled CeO2 of 19.8 g mL–1 of the OPE, the model pollutant of tributyl phosphate (TBP) was efficiently degraded with phosphorus immobilization efficiency near 100%. Meanwhile, the mineralization efficiency of TBP was also as high as 98%, which was reflected by the chemical oxygen demand change of liquid products. Gaseous products generated from CeO2-catalyzed TBP degradation could also fulfill the requirements of an environmental standard. Further mechanism studies indicated that the surface oxygen vacancy in CeO2 induced the in situ formation of superoxide radicals, which dominated TBP degradation. During catalytic degradation, the P-containing species were mainly immobilized as cerium phosphate, while the hydrocarbon chains of TBP were degraded into small molecules and finally mineralized into inorganic species. The developed CeO2-catalyzed OPE degradation approach was also applicable to aromatic and halogenated OPEs, i.e., tricresyl phosphate and tris(2-chloroethyl) phosphate. This study provided a possible alternative for waste treatment of the waste of OPEs with low environmental risks.

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Engineering oxygen vacancies of 2D WO3 for visible-light-driven benzene hydroxylation with dioxygen

Cited by 18 publications

References 69 publications

All-Optically Regulated ITO/Cu₂O/WO₃/ITO Memristor for Optoelectronic Neuromorphic Computing

All-Optically Regulated ITO/Cu₂O/WO₃/ITO Memristor for Optoelectronic Neuromorphic Computing

Amino-tethered Ni₃S₂/MoS₂ heterojunction for coupling electrochemical 5-hydroxymethylfurfural oxidation with 4-nitrophenol hydrogenation

Treatment of Organophosphorus Esters Waste by CeO₂: Efficient Degradation with Simultaneous Phosphorus Immobilization

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Engineering oxygen vacancies of 2D WO3 for visible-light-driven benzene hydroxylation with dioxygen

Cited by 18 publications

References 69 publications

All-Optically Regulated ITO/Cu2O/WO3/ITO Memristor for Optoelectronic Neuromorphic Computing

All-Optically Regulated ITO/Cu2O/WO3/ITO Memristor for Optoelectronic Neuromorphic Computing

Amino-tethered Ni3S2/MoS2 heterojunction for coupling electrochemical 5-hydroxymethylfurfural oxidation with 4-nitrophenol hydrogenation

Treatment of Organophosphorus Esters Waste by CeO2: Efficient Degradation with Simultaneous Phosphorus Immobilization

Contact Info

Product

Resources

About

All-Optically Regulated ITO/Cu₂O/WO₃/ITO Memristor for Optoelectronic Neuromorphic Computing

All-Optically Regulated ITO/Cu₂O/WO₃/ITO Memristor for Optoelectronic Neuromorphic Computing

Amino-tethered Ni₃S₂/MoS₂ heterojunction for coupling electrochemical 5-hydroxymethylfurfural oxidation with 4-nitrophenol hydrogenation

Treatment of Organophosphorus Esters Waste by CeO₂: Efficient Degradation with Simultaneous Phosphorus Immobilization