Engineering the Quantum Scientific Computing Open User Testbed (QSCOUT): Design details and user guide

Clark, Susan M.; Lobser, Daniel; Revelle, Melissa; Yale, Christopher G.; Bossert, David; Burch, Ashlyn D.; Chow, Matthew N.; Hogle, Craig W.; Ivory, Megan; Pehr, Jessica; Salzbrenner, Bradley; Stick, Daniel; Sweatt, William; Wilson, Joshua M.; Winrow, Edward; Maunz, Peter

doi:10.48550/arxiv.2104.00759

Cited by 3 publications

(3 citation statements)

References 42 publications

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“…[12]. The RF source for modulating the control lasers has been upgraded from direct digital synthesizers (AD9912) to an RF system on chip (ZCU111) driven by firmware from Sandia National Laboratories [46]. After initializing the qubits to the |00 state, we apply a sequence of five MS gates, which ideally generates the maximally entangled state…”

Section: Methodsmentioning

confidence: 99%

Batch Optimization of Frequency-Modulated Pulses for Robust Two-qubit Gates in Ion Chains

Kang,

Liang,

Zhang

et al. 2021

Preprint

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Two-qubit gates in trapped ion quantum computers are generated by applying spin-dependent forces that temporarily entangle the internal state of the ion with its motion. Laser pulses are carefully designed to generate a maximally entangling gate between the ions while minimizing any residual entanglement between the motion and the ion. The quality of the gates suffers when actual experimental parameters differ from the ideal case. Here we improve the robustness of frequencymodulated Mølmer-Sørensen gates to motional mode frequency offsets by optimizing average performance over a range of systematic errors using batch optimization. We then compare this method to frequency modulated gates optimized for ideal parameters that include an analytic robustness condition. Numerical simulations show good performance up to 12 ions and the method is experimentally demonstrated on a two-ion chain.

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Section: Methodsmentioning

confidence: 99%

Batch Optimization of Frequency-Modulated Pulses for Robust Two-qubit Gates in Ion Chains

Kang,

Liang,

Zhang

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…In addition, these qubit levels are well-isolated from sources of decoherence, with effectively infinite T 1 relaxation times [18] and demonstrated T 2 times in excess of 1 h [1]. For these reasons, 171 Yb + has been a popular ion qubit of choice for groups performing quantum computation [19][20][21] and simulation experiments [22].…”

Section: Experimental Apparatusmentioning

confidence: 99%

Susceptibility of trapped-ion qubits to low-dose radiation sources

Cui¹,

Rasmusson²,

D’Onofrio³

et al. 2021

J. Phys. B: At. Mol. Opt. Phys.

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We experimentally study the real-time susceptibility of trapped-ion quantum systems to small doses of ionizing radiation. We expose an ion-trap apparatus to a variety of α, β, and γ sources and measure the resulting changes in trapped-ion qubit lifetimes, coherence times, gate fidelities, and motional heating rates. We found no quantifiable degradation of ion trap performance in the presence of low-dose radiation sources for any of the measurements performed. This finding is encouraging for the long-term prospects of using ion-based quantum information systems in extreme environments, indicating that much larger doses may be required to induce errors in trapped-ion quantum processors.

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“…In addition, these qubit levels are wellisolated from sources of decoherence, with effectively infinite T 1 relaxation times [18] and demonstrated T 2 times in excess of one hour [1]. For these reasons, 171 Yb + has been a popular ion qubit of choice for groups performing quantum computation [19,20,21] and simulation experiments [22].…”

Section: Experimental Apparatusmentioning

confidence: 99%

Susceptibility of Trapped-Ion Qubits to Low-Dose Radiation Sources

Cui,

Rasmusson,

D'Onofrio

et al. 2021

Preprint

View full text Add to dashboard Cite

We experimentally study the real-time susceptibility of trapped-ion quantum systems to small doses of ionizing radiation. We expose an ion-trap apparatus to a variety of α, β, and γ sources and measure the resulting changes in trappedion qubit lifetimes, coherence times, gate fidelities, and motional heating rates. We found no quantifiable degradation of ion trap performance in the presence of low-dose radiation sources for any of the measurements performed. This finding is encouraging for the long-term prospects of using ion-based quantum information systems in extreme environments, indicating that much larger doses may be required to induce errors in trapped-ion quantum processors.

show abstract

Engineering the Quantum Scientific Computing Open User Testbed (QSCOUT): Design details and user guide

Cited by 3 publications

References 42 publications

Batch Optimization of Frequency-Modulated Pulses for Robust Two-qubit Gates in Ion Chains

Batch Optimization of Frequency-Modulated Pulses for Robust Two-qubit Gates in Ion Chains

Susceptibility of trapped-ion qubits to low-dose radiation sources

Susceptibility of Trapped-Ion Qubits to Low-Dose Radiation Sources

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