Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga<sub>2</sub>O<sub>3</sub> Heterojunction by Edge Termination Optimization

Gong, Hehe; Zhou, Feng; Xiao, Ming; Yang, Zineng; Ren, Fang-Fang; Gu, Shulin; Lu, Hai; Zhang, Rong; Zhang, Yuhao; Ye, Jiandong

doi:10.1109/led.2024.3410839

IEEE Electron Device Lett.

2024

DOI: 10.1109/led.2024.3410839

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Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga₂O₃ Heterojunction by Edge Termination Optimization

Hehe Gong,

Feng Zhou,

Ming Xiao

et al.

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Cited by 8 publications

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Reliability of 1.5 × 1.5 mm²β‐Ga₂O₃ Power Diodes and Application in DC–DC Converter

Wu,

Wen,

Liu

et al. 2024

Physica Status Solidi (b)

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High breakdown voltage and exceptional robustness make β‐Ga2O3 power devices a key focus of current research. Despite growing attention to the reliability of β‐Ga2O3 devices, systematic studies are still limited, and comparative analyses between different structures remain unreported. This study presents a comparative analysis of β‐Ga2O3 Schottky barrier diodes (SBD) and p‐NiO/β‐Ga2O3 heterojunction diodes (HJD) with mesa termination through comprehensive reliability test, including high‐temperature storage, reverse recovery, surge current, and rectification characteristics. The results indicate that the SBDs outperform in high‐frequency rectification performance up to 1 MHz, whereas the HJDs demonstrate superior high‐temperature stability of 250 °C. The surge current densities of the SBD and HJD devices reach 0.88 and 0.78 kA cm−2, respectively, representing the highest values reported to date. In particular, the efficiency of both the SBD and HJD devices exceeds 95% in circuit application, with SBD excelling in high‐frequency mode and HJD performing optimally in high‐temperature conditions. This study highlights the high reliability of β‐Ga2O3 devices and provides valuable insights for the application under varied operating conditions.

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Reliability of 1.5 × 1.5 mm²β‐Ga₂O₃ Power Diodes and Application in DC–DC Converter

Wu,

Wen,

Liu

et al. 2024

Physica Status Solidi (b)

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Fast switching Ga2O3 Schottky barrier power diode with beveled-mesa and BaTiO3 field plate edge termination

Sun,

Gong,

et al. 2024

Applied Physics Letters

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Power devices rely on ideal edge termination to suppress the electric field crowding and avoid premature breakdown before the material's critical field is reached. In this work, a hybrid electric field management configuration, featuring the combination of beveled-mesa (BM) termination and high-k oxide BaTiO3 field plate (FP), was implemented in Ga2O3 Schottky barrier diodes (SBDs). This BMFP-SBD realizes a breakdown voltage (BV) of 1.7 kV with extremely low reverse leakage current, outperforming the BM terminated SBD with BV of 0.64 kV and bare SBD with BV of 0.22 kV. Based on the temperature-dependent reverse characteristics, the dominant leakage mechanism transforms from Poole–Frenkel (P–F) emission in BM-SBD to variable-range-hopping (VRH) in BMFP-SBD at high bias. In particular, under switching conditions of di/dt up to 420 A/μs, the BMFP-SBD exhibits superior dynamic switching characteristics with a short reverse recovery time of 10.1 ns, which are comparable with those in advanced commercial SiC SBDs. These findings underscore the potential of Ga2O3 SBD enabled by BM and high-k FP edge termination for high-speed and high-voltage power electronics applications.

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Cryogenic temperature operation of NiO/Ga2O3 heterojunction and Ni/Au Schottky rectifiers

Wan,

Chiang,

et al. 2024

AIP Advances

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Vertical geometry NiO/Ga2O3 heterojunction (HJ) rectifiers and Ni/Au Schottky rectifiers fabricated on the same wafer and each with the same diameter (100 μm) were operated at 77–473 K to compare their capabilities in space-like environments. The HJ rectifiers suffer a 4-order reduction in forward current at 77 K due to the freeze-out of acceptors in the NiO, leading to MIS-type operation. By sharp contrast, the Schottky rectifiers have higher forward current and lower on-resistance at 77 K compared to 298 K due to improved carrier mobility. The on/off ratio of Schottky rectifiers at 77 K becomes similar to HJ rectifiers at 298–473 K. The reverse recovery time of Schottky rectifiers is reduced from 20 ns at 273 K to 16 ns at 77 K, while HJ rectifiers cannot be switched at this temperature. While the latter are superior for high-temperature applications, the former are better suited to cryogenic operation.

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Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga₂O₃ Heterojunction by Edge Termination Optimization

Cited by 8 publications

References 29 publications

Reliability of 1.5 × 1.5 mm²β‐Ga₂O₃ Power Diodes and Application in DC–DC Converter

Reliability of 1.5 × 1.5 mm²β‐Ga₂O₃ Power Diodes and Application in DC–DC Converter

Fast switching Ga2O3 Schottky barrier power diode with beveled-mesa and BaTiO3 field plate edge termination

Cryogenic temperature operation of NiO/Ga2O3 heterojunction and Ni/Au Schottky rectifiers

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Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga2O3 Heterojunction by Edge Termination Optimization

Cited by 8 publications

References 29 publications

Reliability of 1.5 × 1.5 mm2β‐Ga2O3 Power Diodes and Application in DC–DC Converter

Reliability of 1.5 × 1.5 mm2β‐Ga2O3 Power Diodes and Application in DC–DC Converter

Fast switching Ga2O3 Schottky barrier power diode with beveled-mesa and BaTiO3 field plate edge termination

Cryogenic temperature operation of NiO/Ga2O3 heterojunction and Ni/Au Schottky rectifiers

Contact Info

Product

Resources

About

Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga₂O₃ Heterojunction by Edge Termination Optimization

Reliability of 1.5 × 1.5 mm²β‐Ga₂O₃ Power Diodes and Application in DC–DC Converter

Reliability of 1.5 × 1.5 mm²β‐Ga₂O₃ Power Diodes and Application in DC–DC Converter