2015
DOI: 10.1002/aelm.201400050
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Enhanced Broad Band Photodetection through Piezo‐Phototronic Effect in CdSe/ZnTe Core/Shell Nanowire Array

Abstract: The piezo‐phototronic effect is of immense importance for improving the performance of optoelectronic nanodevices. This is accomplished by tuning the charge carrier generation, separation, and transport under the influence of the inner piezopotential. In this paper, a broad band photodetector is demonstrated that is based on II‐VI binary CdSe/ZnTe core/shell nanowire arrays, in which photodetection is greatly enhanced by the piezo‐phototronic effect. The photodetector performance under UV (385 nm), blue (465 n… Show more

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Cited by 80 publications
(41 citation statements)
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“…Luo et al constructed CdS-ZnTe core-shell nano-heterojunction photodetectors and measured their photoresponse under light illumination with a wavelength of 638 nm and light intensity of 2 mW cm -2 at 1 V (Figure 14) [25]. The fabricated core-shell nano-heterojunction photodetectors exhibited responsivity of 1.55 × 10 3 AW −1 , conductive gain of 3.3 × 10 3 , detectivity of 8.7 × 10 12 cm Hz 1/2 W −1 , which are much higher than the devices based on is greatly enhanced by the piezo-phototronic effect [34]. Jie et al fabricated Ge-CdS core-shell heterojunction nanowire photodetectors with excellent diode characteristics and a pronounced photoresponse under light illumination.…”
Section: Photodetectorsmentioning
confidence: 95%
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“…Luo et al constructed CdS-ZnTe core-shell nano-heterojunction photodetectors and measured their photoresponse under light illumination with a wavelength of 638 nm and light intensity of 2 mW cm -2 at 1 V (Figure 14) [25]. The fabricated core-shell nano-heterojunction photodetectors exhibited responsivity of 1.55 × 10 3 AW −1 , conductive gain of 3.3 × 10 3 , detectivity of 8.7 × 10 12 cm Hz 1/2 W −1 , which are much higher than the devices based on is greatly enhanced by the piezo-phototronic effect [34]. Jie et al fabricated Ge-CdS core-shell heterojunction nanowire photodetectors with excellent diode characteristics and a pronounced photoresponse under light illumination.…”
Section: Photodetectorsmentioning
confidence: 95%
“…Both devices showed much higher performance than the photodetectors based on ZnO, ZnTe, and CdSe nanowires [67][68][69]. Hz 1/2 W −1 , which are much higher than the devices based on is greatly enhanced by the piezo-phototronic effect [34]. Jie et al fabricated Ge-CdS core-shell heterojunction nanowire photodetectors with excellent diode characteristics and a pronounced photoresponse under light illumination.…”
Section: Photodetectorsmentioning
confidence: 99%
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“…The combination of the expansion and shift of the depletion region as well as the band profile bending at the vicinity of p–n junction contributes to the optimal performances of photodetectors. With a similar mechanism, photodetectors made from CdSe/ZnTe core–shell structure also realize an improved photosensitivity …”
Section: Recent Progress and Applicationsmentioning
confidence: 97%
“…[127][128][129][130][131] Type-II heterostructures can extend the photoresponse spectral range to the longer wavelength which is dominated by the lower band gap component. Both the ZnO/ZnS and CdSe/ZnTe core-shell nanowires which have type II alignment exhibit an efficient broad band UV/visible photoresponse.…”
Section: Three-dimensional Core-shell Nanowire Array Photodetectormentioning
confidence: 99%