Enhanced coherent terahertz emission from indium arsenide in the presence of a magnetic field

McLaughlin, Ryan; Corchia, A.; Johnston, Michael B.; Chen, Q.; Ciesla, C. M.; Arnone, D. D.; Jones, G. A. C.; Linfield, Edmund H.; Davies, A. G.; Pepper, M.

doi:10.1063/1.126247

Cited by 97 publications

(41 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Using this assumption, we deduce an average THz power of 40 µW. To our knowledge, this value, supported by the large value of P/P probe , represents the strongest THz signal reported in the literature using a Ti:sapphire oscillator as a pump source (Cai et al 1997, Wu and Zhang 1997, McLaughlin et al 2000, Heyman et al 2001, Andrews et al 2002.…”

Section: Resultssupporting

confidence: 49%

A terahertz system using semi-large emitters: noise and performance characteristics

et al. 2002

View full text Add to dashboard Cite

We have built a relatively simple, highly efficient, terahertz (THz) emission and detection system centred around a 15 fs Ti:sapphire laser. In the system, 200 mW of laser power is focused on a 120 µm diameter spot between two silverpaint electrodes on the surface of a semi-insulating GaAs crystal, kept at a temperature near 300 K, biased with a 50 kHz, ±400 V square wave. Using rapid delay scanning and lock-in detection at 50 kHz, we obtain probe laser quantum-noise limited signals using a standard electro-optic detection scheme with a 1 mm thick (110) oriented ZnTe crystal. The maximum THz-induced differential signal that we observe is P/P = 7 × 10 −3 , corresponding to a THz peak amplitude of 95 V cm −1 . The THz average power was measured to be about 40 µW, to our knowledge the highest power reported so far generated with Ti:sapphire oscillators as a pump source. The system uses off-the-shelf electronics and requires no microfabrication techniques.

show abstract

Section: Resultssupporting

confidence: 49%

A terahertz system using semi-large emitters: noise and performance characteristics

et al. 2002

View full text Add to dashboard Cite

show abstract

“…This work builds on the large body of literature related to terahertz emission from InAs. [5][6][7]11,13,20,21 We have observed a temperature-induced polarity reversal of the terahertz radiation from both p-InMnAs and n-InMnAs, in contrast to what has been previously observed in p-InAs. 6,7 We attribute the observed polarity reversal of the terahertz radiation to the competition between two oppositely directed sources of photoinduced current: the surface-fieldinduced current and the photo-Dember effect.…”

contrasting

confidence: 51%

“…[5][6][7][8][9][10][11] In particular, magnetic-field-induced enhancement of terahertz radiation from nonmagnetic semiconductor surfaces has been investigated thoroughly. [11][12][13][14][15][16] Recently, terahertz emission from ferromagnetic metal films 17,18 and from the dilute ferromagnetic semiconductor GaMnAs ͑Ref. 19͒ have also been demonstrated.…”

mentioning

confidence: 99%

Temperature dependence of terahertz emission from InMnAs

Zhan

Deibel

Laib

et al. 2007

Optical Terahertz Science and Technology

View full text Add to dashboard Cite

“…McLaughlin et al [145] reported a quadratic dependence of the THz emission on magnetic field up to 3 T. Beyond 3 T, Ohtake et al [146] demonstrated that the radiated THz power saturates at 4 T, decreases to a minimum at 6 T, and increases again at 14 T.…”

Section: Inas and Other Narrow-gap Semiconductorsmentioning

confidence: 99%

Semiconductors for terahertz photonics applications

Krotkus¹

2010

J. Phys. D: Appl. Phys.

112

View full text Add to dashboard Cite

Abstract:Generation and measurement of ultrashort, sub-picosecond pulses of electromagnetic radiation with their characteristic Fourier spectra that reach far into terahertz (THz) frequency range has recently become a versatile tool of the far-infrared spectroscopy and imaging. This technique -THz time-domain spectroscopy, in addition to a femtosecond pulse laser, requires semiconductor components manufactured from materials with a short photoexcited carrier lifetime, high carrier mobility, and large dark resistivity. Here we will review most important developments in the field of investigation of such materials. Main characteristics of low-temperature-grown or ion-implanted GaAs and semiconducting compounds sensitive in the wavelength ranges around 1 µm and 1.5 µm will be surveyed. The second part of the paper is devoted to the effect of surface emission of THz transients from semiconductors illuminated by femtosecond laser pulses. Main physical mechanisms leading to this emission as well as their manifestation in various crystals will be described.

show abstract

Enhanced coherent terahertz emission from indium arsenide in the presence of a magnetic field

Abstract: Articles you may be interested inElectric-field-induced anisotropy of excitonic optical properties in semiconductor quantum dots

Cited by 97 publications

References 8 publications

A terahertz system using semi-large emitters: noise and performance characteristics

A terahertz system using semi-large emitters: noise and performance characteristics

Temperature dependence of terahertz emission from InMnAs

Semiconductors for terahertz photonics applications

Contact Info

Product

Resources

About