“…To date, various technologies for lowing or controlling the contact resistivity of (Bi,Sb) 2 Te 3 and the electrode have been investigated, including surface modification − (orange region), interfacial layer design, ,,, (blue region), and structural modulation ,, (red region) as shown in Figure f. In this work, for both p- and n-type interfaces, ultralow contact resistance is achieved with the localized surface doping strategy, which is basically the best-in-class.…”