2018
DOI: 10.1109/tasc.2018.2793309
|View full text |Cite
|
Sign up to set email alerts
|

Enhanced Critical Current Density in Bulk MgB2

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2018
2018
2024
2024

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 10 publications
(3 citation statements)
references
References 23 publications
0
3
0
Order By: Relevance
“…This is due to amorphous nano boron precursor that was used. The nano boron precursor results in nano-sized MgB 2 grains in the final bulk leading to high grain boundary pinning which acts specifically at low fields [7].…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…This is due to amorphous nano boron precursor that was used. The nano boron precursor results in nano-sized MgB 2 grains in the final bulk leading to high grain boundary pinning which acts specifically at low fields [7].…”
Section: Resultsmentioning
confidence: 99%
“…[4,5]. However, additional enhancement of flux pinning and critical current density (J c ) is significant for material compatibility at high-field applications as MgB 2 superconducting material consists of weak flux pinning and poor grain connectivity which would further lead to a sharp fall in critical current density at higher magnetic fields around 20 K [6,7]. In particular, doping and chemical addition with C or C-based compounds in MgB 2 contributed towards the improvement of critical current density performance due to amelioration of intra-band scattering and grain connectivity as well as the induction of extra pinning centers [8].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation