2013
DOI: 10.1063/1.4803001
|View full text |Cite
|
Sign up to set email alerts
|

Enhanced detection of NO2 with recessed AlGaN/GaN open gate structures

Abstract: Recessing of the open gate region of AlGaN/GaN heterostructures is shown to dramatically enhance the sensitivity of these devices to surface interactions. This is demonstrated by NO2 exposure under humid conditions. NO2 adsorption at the open gate region leads to a decrease in two-dimensional electron gas conductivity, which we attribute to the interaction of NO2 with surface donor states. We find that the recessing enhances the sensitivity to NO2 by almost three orders of magnitude. This may also be used to i… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
14
0

Year Published

2015
2015
2025
2025

Publication Types

Select...
10

Relationship

0
10

Authors

Journals

citations
Cited by 21 publications
(14 citation statements)
references
References 32 publications
0
14
0
Order By: Relevance
“…In this latter mode of operation UV photo-activation has also been shown to be effective [8,9,10,11,12,13]. A second group of materials that exhibits a similar kind of low-temperature response, is III-nitride materials both in the form of AlGaN/GaN high electron mobility transistors (HEMT) with flat surface morphologies [14,15,16,17,18,19] as well as in the form of GaN/InGaN nanowire heterostructures [20,21,22]. These effects can be attributed to the fact that III-nitride surfaces tend to develop surface oxides when exposed to ambient air which makes them similar to conventional MOx materials [23,24,25,26,27,28].…”
Section: Introductionmentioning
confidence: 99%
“…In this latter mode of operation UV photo-activation has also been shown to be effective [8,9,10,11,12,13]. A second group of materials that exhibits a similar kind of low-temperature response, is III-nitride materials both in the form of AlGaN/GaN high electron mobility transistors (HEMT) with flat surface morphologies [14,15,16,17,18,19] as well as in the form of GaN/InGaN nanowire heterostructures [20,21,22]. These effects can be attributed to the fact that III-nitride surfaces tend to develop surface oxides when exposed to ambient air which makes them similar to conventional MOx materials [23,24,25,26,27,28].…”
Section: Introductionmentioning
confidence: 99%
“…This solution formed a contact to an electrolyte-gated HEMT transistor (figure 1). HEMTs with recessed, non-metallized gates were used to increase their sensitivity [7]. The well-known, ultralow-noise level in combination with high-ohmic gate inputs of the 2dimensional electron gas devices enable the detection of tiny skin potential fluctuations.…”
Section: Sensors and Measurementsmentioning
confidence: 99%
“…Such sensitivity would clearly outperform the sensitivity of existing IMS instruments. Other attempts at attaining high sensitivity involve nanostructures formed from mono-crystalline semiconductor materials with surfaces that had been modified to induce gas sensitivity [ 68 , 69 , 70 , 71 , 72 , 73 , 74 , 75 , 76 ]. In such nanostructures, gas sensitivity is induced by surface oxidation and/or by surface functionalization with specifically chosen organic ligands.…”
Section: Achievements Future Challenges and Outlookmentioning
confidence: 99%