“…In this latter mode of operation UV photo-activation has also been shown to be effective [8,9,10,11,12,13]. A second group of materials that exhibits a similar kind of low-temperature response, is III-nitride materials both in the form of AlGaN/GaN high electron mobility transistors (HEMT) with flat surface morphologies [14,15,16,17,18,19] as well as in the form of GaN/InGaN nanowire heterostructures [20,21,22]. These effects can be attributed to the fact that III-nitride surfaces tend to develop surface oxides when exposed to ambient air which makes them similar to conventional MOx materials [23,24,25,26,27,28].…”