Enhanced dielectric and ferroelectric properties of PZT thin films derived by an ethylene glycol modified sol–gel method

Lu, Guo‐ping; Dong, Han; Chen, Jianguo; Cheng, Jinrong

doi:10.1007/s10971-017-4311-5

Cited by 18 publications

(9 citation statements)

References 26 publications

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“…The evaluation of the above integral was performed over the cross-section of the computational box in the (x,y) plane located 1 nm below the top film surface. The topological index (11) can be of either sign and is supposed to take an integer (winding) number characterizing the vorticity of the object. The dependence of the index n on the misfit strain is presented in Figure 8 with and without account of the flexoelectric effect.…”

Section: Topologic Polarization Structures At the Top Film Surfacementioning

confidence: 99%

“…Thin films of lead zirconate-titanate (PZT) belong to the most widely used ferroelectric materials, having excellent piezoelectric properties and phase diagrams that allow using their whole potential in electronic devices [1,2,3,4,5,6,7]. Their properties are mostly well-known and thoroughly analysed [8,9,10,11,12,13,14]. In comparison with other phase symmetries, rhombohedral thin films of PZT are known to exhibit extra high piezoelectric properties [15].…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7] Their properties are mostly well-known and thoroughly analyzed. [5,[8][9][10][11][12][13] In comparison with other phase symmetries, rhombohedral thin dispersion curves, [43] etc. When thin films are epitaxially grown on rigid substrates with a mismatch, the misfit strains may be relieved via formation of local misfit dislocations, which, being inhomogeneous, also promote flexoelectricity.…”

Section: Introductionmentioning

confidence: 99%

“…[ 1–7 ] Their properties are mostly well‐known and thoroughly analyzed. [ 5,8–13 ] In comparison with other phase symmetries, rhombohedral thin films of PZT are known to exhibit extra high piezoelectric properties. [ 14 ] However, understanding of their important features is still lacking, particularly, of the role of the flexoelectric effect, which is especially pronounced in thin films.…”

Section: Introductionmentioning

confidence: 99%

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Control of Domain States in Rhombohedral Lead Zirconate Titanate Films via Misfit Strains and Surface Charges

Vorotiahin

Morozovska

Eliseev

et al. 2021

Adv Elect Materials

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Using the Landau-Ginzburg-Devonshire theory, an influence of the misfit strain and surface screening charges, as well as the role of the flexoelectric effect, has been studied by numerical modelling in the case of a rhombohedral lead zirconate-titanate ferroelectric/ferroelastic thin film with an anisotropic mismatch produced by a substrate. It was established that the magnitude and sign of the misfit strain influence the domain structure and predominant directions of the polarization vector, providing misfit-dependent phases with different favourable polarization components. Whilst strong enough compressive misfit strains favour a phase with an orthorhombic-like polarization directions, strong tensile misfits only yield inplane polarization components. The strength of surface screening is seen to condition the existence of closure domain structures and, by increasing, supports the single-domain state depending on the value of the misfit strain. A crucial role of the flexoelectric effect is revealed as it saves the polar state of the film at high tensile misfit strains. Without the flexoelectric effect, the growing tensile misfit strain eventually suppresses the polarization, and hence any domain structure. Cooperative influence of the misfit strain, surface screening charges and temperature can set a thin rhombohedral ferroelectric film into a number of different polar and structural states, whereby the role of the flexoelectric effect is significant for establishing its phase diagram.

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Section: Topologic Polarization Structures At the Top Film Surfacementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Control of Domain States in Rhombohedral Lead Zirconate Titanate Films via Misfit Strains and Surface Charges

Vorotiahin

Morozovska

Eliseev

et al. 2021

Adv Elect Materials

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“…In past decades, PbZr0.4Ti0.6O3 (PZT) thin film has attracted much attention because of excellent ferroelectric and piezoelectric properties, which are favorable for non-volatile memory and micro-electromechanical system applications [1][2][3][4][5][6][7]. Generally, polycrystalline PZT film is utilized in such applications, but it shows insufficient polarization and piezoelectric effect, partially due to complicated grain orientations and inevitable grain boundaries.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial-like growth of solution-processed PbZr0.4Ti0.6O3 thin film on single-crystal Nb-doped SrTiO3 substrate

Trinh¹

2017

MaP

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PbZr0.4Ti0.6O3 (PZT) thin films have been conventionally fabricated on traditional silicon substrates with a platinum bottom electrode; however, as a consequence of unit cell mismatch, the films are difficult to form as an epitaxial-like growth. Hence, PZT films deposited on single-crystal niobium doped SrTiO3(111) substrates (Nb:STO) are promising to solve this issue thanks to the similar perovskite structure between PZT and STO. Essentially, Nb:STO material is a conductor, playing a part in both bottom electrode and epitaxial substrate. In this work, 200-nm-thick PZT films were successfully fabricated on Nb:STO substrates by a solution process. One obtained that PZT(111) peak started to appear on the Nb:STO substrate at a low annealing temperature of 450oC. Also, scanning electron microscopy observation shows smooth and homogeneous surface of PZT films on Nb:STO substrate with no grain boundary, which evidences for epitaxial-like growth of PZT thin films. Remnant polarization of 6 ÂµC/cm2 and leakage current of 8Ã—10-8 A were obtained at applied voltage of 5 V.

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Robust ferroelectricity enhancement of PZT thin films by a homogeneous seed layer

et al. 2022

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With its excellent ferroelectric properties such as large dielectric constant and large remanent polarization, PZT thin lms are extensively used in micro-sensors and other devices. In this study, the solgel process was used to fabricate Pb(Zr 0.52 Ti 0.48 )O 3 thin lms with Pb(Zr x Ti 1−x )O 3 seed islands. The experimental consequences demonstrate that all the Pb(Zr 0.52 Ti 0.48 )O 3 thin lms with Pb(Zr x Ti 1−x )O 3 seeds show pure perovskite phase with no other impurity phases, and the electrical properties of Pb(Zr 0.52 Ti 0.48 )O 3 thin lms modi ed by Pb(Zr x Ti 1−x )O 3 seed islands with different Zr/Ti ratios are improved, such as remanent polarization increased, dielectric properties increased, coercive electric eld decreased, leakage current density decreased, etc. In particular, the electrical properties of the Pb(Zr 0.52 Ti 0.48 )O 3 thin lms with Pb(Zr x Ti 1−x )O 3 seed islands are the most optimal when the x is 0.52.This paper provides a new technique for optimizing the electrical properties of PZT thin lms, which is of great signi cance for breaking through the bottleneck of the development of ferroelectric memory.

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Enhanced dielectric and ferroelectric properties of PZT thin films derived by an ethylene glycol modified sol–gel method

Cited by 18 publications

References 26 publications

Control of Domain States in Rhombohedral Lead Zirconate Titanate Films via Misfit Strains and Surface Charges

Control of Domain States in Rhombohedral Lead Zirconate Titanate Films via Misfit Strains and Surface Charges

Epitaxial-like growth of solution-processed PbZr0.4Ti0.6O3 thin film on single-crystal Nb-doped SrTiO3 substrate

Robust ferroelectricity enhancement of PZT thin films by a homogeneous seed layer

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