A solid–state
reaction method was used to prepare (Sr2+, Ge4+) co-doped CaCu3Ti4O12 ceramics.
A single-phase of CaCu3Ti4O12 was
detected in all the ceramics. An enormous
evolution of grain growth in (Sr2+, Ge4+) co-doped
CaCu3Ti4O12 ceramics was observed,
which was due to a liquid phase sintering mechanism. Theoretical calculations
showed that Ge dopant ions are more likely substituted in Cu sites
rather than Ti sites. High dielectric permittivity, ∼69,889,
with a low dielectric loss tangent, ∼0.038, was achieved in
a Ca0.95Sr0.05Cu3Ti3.95Ge0.05O12 ceramic. Furthermore, dielectric
permittivity at 1 kHz of this ceramic is more temperature-stable than
that of the CaCu3Ti4O12 and Ca0.95Sr0.05Cu3Ti4O12 ceramics. The enhanced dielectric permittivity with reduced loss
tangent in the co-doped ceramics originated from a metastable insulating
phase created by a liquid phase sintering mechanism. The local insulating
phase along the grain boundary layers can increase the grain boundary
resistance as well as the conduction activation energy of the grain
boundaries, resulting in a decreased dielectric loss tangent. An internal
barrier layer capacitor model supports the origin of the giant dielectric
properties in CaCu3Ti4O12-based ceramics
by all results in this work.