Enhanced dielectric properties of Bi1.5ZnNb1.5O7 thick films via cold isostatic pressing

Liu, Weihong; Wang, Hong

doi:10.1007/s10832-012-9758-8

Cited by 11 publications

(11 citation statements)

References 11 publications

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“…Therefore, the results verify that the BZN addition has not changed the tricritical point composition of the BTS system. It should be noted that the pure BZN system showed a relatively low dielectric permittivity of around 100~160 for thick film, as well as ceramics, as reported by Wang’s group [23,24], and therefore the addition of tricritical ferroelectric material can largely enhance the dielectric permittivity for the material system. In addition, the dielectric loss tan δ for all of our specimens was less than 5% in a temperature range of −50 °C to 100 °C, and a frequency range of 10 2 −10 5 Hz.…”

Section: Resultsmentioning

confidence: 64%

“…It is obvious that the addition of BZN can effectively enhance the breakdown strength by 57% for tricritical ferroelectric BTS 0.105 materials. It is highly possible that the addition of BZN, exhibiting an intermediate dielectric permittivity ( ε r = 30 ~ 160), is able to smooth the electric field distribution around the high-permittivity tricritical-ferroelectric grains [23]. Further increasing the BZN content to 15 wt % or 20 wt % will lead to a slight decrease of dielectric strength, with E b = 232 kV/cm and 199 kV/cm, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…In this paper, we propose a material-modification strategy to enhance the energy density for the tricritical ferroelectric material Ba(Ti 1- x Sn x )O 3 (BTS) through doping with Bi 1.5 ZnNb 1.5 O 7 (BZN) additives [22,23,24]. In order to clarify the effect of BZN on sintering conditions, the density of BTS x - y BZN has been measured with different sintering temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Enhancing the Energy Density of Tricritical Ferroelectrics for Energy Storage Applications

Wang

Gao

et al. 2019

Materials

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Recently, tricritical ferroelectrics have been drawn tremendous attention, owing to their ultrahigh dielectric permittivities of up to εr > 5 × 104, and their consideration for prototype materials in the development of high-performance energy storage devices. Nevertheless, such a materials system suffers from the disadvantage of low breakdown strength, which makes its energy density far from the satisfactory level for practical application. In this paper, a material-modification approach has been reported, for improving the dielectric strength for tricritical ferroelectric materials Ba(Ti1−xSnx)O3 (BTS) through doping with Bi1.5ZnNb1.5O7 (BZN) additives. The results suggest that the electric strength has been largely improved in the modified tricritical ferroelectric material (BTSx-yBZN), and the associated energy density reaches Ue = 1.15 J/cm3. Further microstructure investigation indicates that the modified tricritical ferroelectric material exhibits homogenous fine grains with perovskite structure in crystal symmetry, and the BZN may help to form a special structure that could enhance the breakdown strength. The findings may advance the material design and development of high-energy storage materials.

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Section: Resultsmentioning

confidence: 64%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Enhancing the Energy Density of Tricritical Ferroelectrics for Energy Storage Applications

Wang

Gao

et al. 2019

Materials

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“…Reprinted with permission from [134]. Copyright 2007, American Institute of Physics investigated for various applications of voltage-tunable microwave devices and integrated decoupling capacitors [141][142][143][144]. Interestingly, the low dielectric loss tangent (tan δ) of 5×10 −4 and the high resistivity (~3×10 13 Ωcm) would normally make BZN films highly suitable for microwave regime applications, except for the fact that they exhibit low tunability [144].…”

Section: Pyrochlore Based Oxide Dielectricsmentioning

confidence: 99%

Overview of electroceramic materials for oxide semiconductor thin film transistors

2013

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The flat panel display (FPD) market has been experiencing a rapid transition from liquid crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the accelerated commercialization of OLED televisions already in 2013. The major driving force for this rapid change was the adaptation of novel oxide semiconductor materials as the active channel layer in thin film transistors (TFTs). Since the report of amorphous-InGaZnO (a-IGZO) semiconductor materials in 2004, the FPD industry has accelerated the development of oxide TFTs for mass-production. In this review, we focus on recent progress in applying electro-ceramic materials for oxidesemiconductor thin-film-transistors. First, oxide-based semiconductor materials, distinguished by vacuum or solution processing, are discussed, with efforts to develop high-performance, cost-effective devices reviewed in chronological order. The introduction and role of high dielectric constant -reduced leakage gate insulators, in optimizing oxide-semiconductor device performance, are next covered. We conclude by discussing current issues impacting oxide-semiconductor TFTs, such as field effect mobility and device stability and the proposed directions being taken to address them.

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“…The most attention has been paid to the Zn-, Mg-containing bismuth niobates, which possess high dielectric constant (170-180) and low dielectric loss (~10 -4 ) at 1 MHz (at room temperature) [1][2][3][4][5][6][7][8][9]. To search for the same properties Fe- [10], Mn- [11][12], Co- [13], Ni- [12,[14][15], Cu- [12] and the mixed Zn-M (M -Sr [16], Ca [16][17], Mn [16,18], Ti [19][20][21][22], Sn [19,22], Zr [19,[21][22], Ce [19,22], Gd [21], Ta [23], La [24]), Mg-M (M -Sr [25], Nd [26], Cu [27]) bismuth niobates and other ones were synthesized.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, structure and electrical properties of Mg-, Ni-codoped bismuth niobates

Королева¹,

Пийр²,

Истомина³

2017

Chim.Tech.Acta

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Synthesis, structure and electrical properties of Mg-, Ni-codoped bismuth niobatesMg-, Ni-codoped bismuth niobates Bi 1.6 Mg 0.8-x Ni x Nb 1.6 O 7-δ (x = 0; 0.2; 0.4; 0.6; 0.8) were obtained by conventional solid-state reaction method. It was shown that the Mg atoms are distributed at the Nb sites while the Ni atoms are distributed over the Bi-and the Nb-sites, according to the results of comparison of pycnometric and X-ray density of the Bi 1.6 Mg 0.4 Ni 0.4 Nb 1.6 O 7-δ pyrochlore. In this case, about 15-20% of the vacancies are formed at the Bi sites. The obtained compounds are stable up to their melting point based on the DSC analysis data. Real dielectric permittivity ε' of the Bi 1.6 Mg 0.8-x Ni x Nb 1.6 O 7-δ samples decreases from 80 to 65 with the temperature decrease from 25 to 700 °C and practically does not depend on frequency in the range of 1-1000 kHz. Oxides Bi 1.6 Mg 0.8-x Ni x Nb 1.6 O 7-δ behave like insulators up to 280 °C, their conductivity increases with temperature (E a,dc ≈ 1.3 eV, dc) and with the Ni content at a given temperature.

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Enhanced dielectric properties of Bi1.5ZnNb1.5O7 thick films via cold isostatic pressing

Cited by 11 publications

References 11 publications

Enhancing the Energy Density of Tricritical Ferroelectrics for Energy Storage Applications

Enhancing the Energy Density of Tricritical Ferroelectrics for Energy Storage Applications

Overview of electroceramic materials for oxide semiconductor thin film transistors

Synthesis, structure and electrical properties of Mg-, Ni-codoped bismuth niobates

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