Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon

Abstract

This study reports the effect of an increasing ion dose on both the electrical activation yield and characteristic properties of implanted bismuth donors in silicon. A strong dependence of implant fluence is observed on both the yield of bismuth donors and the measured impurity diffusion. This is such that higher ion concentrations result in both a decrease in activation and an enhancement in donor migration through interactions with mobile silicon lattice vacancies and interstitials. Furthermore, the effect of implant fluence on the properties of the Si:Bi donor bound exciton, D 0 X, is also explored using photoluminescence, PL, measurements. In the highest density sample, centers corresponding to the PL of bismuth D 0 Xs within both the high density region and the lower concentration diffused tail of the implanted donor profile are identifiable.

Photoassisted ionization spectroscopy of few implanted bismuth orbitals in a silicon-on-insulator device

“…The asymmetrical diffusion during RTA is due to an enhanced diffusivity through the heavily damaged and, therefore, vacancy rich, silicon closer to the surface caused by the high energy implant. 12 From the spreading resistance profile, the distribution of nearest neighbor separations was computed using non-homogeneous Poisson point process statistics. 13 As shown an inset in Fig.…”