Enhanced diffusion mechanisms

Bourgoin, J. C.; Corbett, J. W.

doi:10.1080/00337577808240846

Cited by 209 publications

(62 citation statements)

References 207 publications

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“…Our calculated formation energy for the transition state of neutral I As (3.81 eV) is within the range of measured values (3.6-4.4 eV) in semi-insulating GaAs, 47 and our calculated activation energy for migration of þ1 I As (0.45 eV) is in good agreement with the measured value (0.5 6 0.15 eV) in p-type GaAs. 46 In addition to thermal migration, our results indicate that I As can migrate in a minority-carrier device under current injection via a modified Bourgoin-Corbett process 52 with a residual activation energy of 0.05 eV. Starting from the þ1 C 1h p001g ground state, electron capture causes I As to transform to the 0 C 1h p001g transition state from which it will relax to the 0 C 2v 110a ground state, shifting the position of the interstitial atom along the [110] direction by half the distance between adjacent bulk As sites.…”

Section: Discussionmentioning

confidence: 97%

“…This process is consistent with the observation of current-injection annealing in radiation damaged GaAs laser diodes by Barnes in 1970, 48 and with the results from later studies of current-induced annealing in GaAs devices. 44,[50][51][52] Moreover, the small residual activation energy for the process is expected to produce rapid migration of I As in the presence of carriers, and thus, rapid annealing of radiation damage in GaAs devices when the devices are operating.…”

Section: Discussionmentioning

confidence: 99%

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Migration processes of the As interstitial in GaAs

Wright

Modine

2016

Journal of Applied Physics

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Thermal migration processes of the As interstitial in GaAs were investigated using density-functional theory and the local-density approximation for exchange and correlation. The lowest-energy processes were found to involve the À1, 0, and þ1 charge states, and to produce migration along h110i-type directions. In the À1 and 0 charge states, migration proceeds via hops between split-interstitial stable configurations at bulk As sites through bridging saddle-point configurations in which the interstitial atom is equidistant from two adjacent bulk As sites. In the þ1 charge state, the roles of these two configurations are approximately reversed and migration proceeds via hops between bridging stable configurations through higher-energy split-interstitial stable configurations bounded by a pair of distorted split-interstitial saddle-point configurations. The predicted activation energies for migration in the 0 and þ1 charge states agree well with measurements in semi-insulating and p-type material, respectively. Also consistent with experiments, the approximate reversal of the stable and saddle-point configurations between the 0 and þ1 charge states is predicted to enable carrier-induced migration with a residual activation energy of 0.05 eV. Published by AIP Publishing.

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Section: Discussionmentioning

confidence: 97%

Section: Discussionmentioning

confidence: 99%

Migration processes of the As interstitial in GaAs

Wright

Modine

2016

Journal of Applied Physics

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“…This conclusion is _ 'o supported by the discrepancy between the irradiated and nonirradiated point defect diffusivi :,'smentioned in the preceding paragraph. It is well established that the point defect charge state can dramatically alter the migration .... energy of vacancies and interstitials in semiconductors and insulators [22][23][24]. It has also been shown experimentally that ionizing radiation produces a large enhancement in the diffusivity of vacancies [25] and hydrogen isotopes [26,27] in oxide insulators.…”

Section: Resultsmentioning

confidence: 96%

“…According to calculations, the diffusivity of F+ centers is expected to be significantly higher than that of F ......... centers inoxide insulators [24].…”

Section: Resultsmentioning

confidence: 99%

Effect of irradiation spectrum on the microstructure of ion-irradiated Al{sub 2}O{sub 3}

Zinkle

1994

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“…From low temperature irradiation studies, it is well-known, however, that the self-interstitial in p-type Si is mobile at temperatures as low as 4 K [24]. This is explained by an athermal BourgoinCorbett diffusion mechanism whereby the energy needed for the self-interstitial diffusion is not supplied by temperature but by carrier recombination [25]. This athermal self-interstitial diffusion has also been modeled extensively during the last 20 years using ab initio calculations.…”

Section: Vacancy and Interstitial Diffusivitymentioning

confidence: 97%

In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures

Vanhellemont¹,

Anada²,

Nagase³

et al. 2015

Phys. Status Solidi C

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Si nanowire‐based Tunnel‐Field Effect Transistor (TFET) characteristics are intensively studied as function of nanowire diameter and doping. A significant reduction of B diffusion with decreasing nanowire diameter is e.g. observed and attributed to reduced transient enhanced diffusion close to the nanowire surface caused by the recombination and out‐diffusion of excess self‐interstitials. In an Ultra High Voltage Electron Microscope (UHVEM), the formation of self‐interstitial clusters can be studied in situ while varying e‐beam flux, irradiation temperature, impurity concentration and capping layers surrounding the nanowires.Results are presented on {113}‐defect formation in Si nanowires with diameters between 40 and 500 nm. The Si nanowires are embedded in SiO2 and are etched into an epitaxial Si stack on a heavily As doped Si substrate. The top layer of the epitaxial stack is in situ B doped or B implanted. In situ UHVEM studies are performed on focused ion beam prepared cross‐section samples, irradiating with different fluxes of 2 MeV electrons between room temperature and 375 °C. A strong dependence of {113}‐defect formation on nanowire radius and doping is observed. The observations are compared with simulations based on quasi‐chemical reaction rate theory. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Enhanced diffusion mechanisms

Cited by 209 publications

References 207 publications

Migration processes of the As interstitial in GaAs

Migration processes of the As interstitial in GaAs

Effect of irradiation spectrum on the microstructure of ion-irradiated Al{sub 2}O{sub 3}

In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures

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