Enhanced efficiency of organic solar cells based on (MEH-PPV) with graphene and quantum dots

Mustapha, Nazir; Fekkai, Zakia; Alkaoud, A.

doi:10.1016/j.ijleo.2015.11.218

Cited by 17 publications

(4 citation statements)

References 30 publications

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“…The IRabsorption spectra of the pristine PbS QDlayer and the graphene/PbS QDhybrid system is shown infigure 1(a). Although the presence of graphene has no effecton the location of theabsorption peak at 1180 nm (corresponding to the band gap energy of the PbS QDs) of light in the hybrid system, higher absorption intensity is achieved in the graphene/PbS QDhybrids due to thegraphene addition, which enhances the charge transfer within the active layer [32]. The TEMof PbS QDs is shown in the inset of figure 1(a).…”

Section: Resultsmentioning

confidence: 99%

Graphene and PbS quantum dot hybrid vertical phototransistor

Song

Zhang

et al. 2017

Nanotechnology

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A field-effect phototransistor based on a graphene and lead sulfide quantum dot (PbS QD) hybrid in which PbS QDs are embedded in a graphene matrix has been fabricated with a vertical architecture through a solution process. The n-type Si/SiO substrate (gate), Au/Ag nanowire transparent source electrode, active layer and Au drain electrode are vertically stacked in the device, which has a downscaled channel length of 250 nm. Photoinduced electrons in the PbS QDs leap into the conduction band and fill in the trap states, while the photoinduced holes left in the valence band transfer to the graphene and form the photocurrent under biases from which the photoconductive gain is evaluated. The graphene/QD-based vertical phototransistor shows a photoresponsivity of 2 × 10 A W, and specific detectivity up to 7 × 10 Jones under 808 nm laser illumination with a light irradiance of 12 mW cm. The solution-processed vertical phototransistor provides a new facile method for optoelectronic device applications.

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Section: Resultsmentioning

confidence: 99%

Graphene and PbS quantum dot hybrid vertical phototransistor

Song

Zhang

et al. 2017

Nanotechnology

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“…The peak wavelengths of both samples at 950 nm correspond to the band gap energy of the PbS QDs. However, the absorbance of the graphene-PbS QD composite is greater than that of the Pbs QDs alone because of enhanced photoinduced charge transfer with the active layer 29 . Note that this increase of absorbance is not mainly induced by absorption of multiple layers of graphene because absorbance of graphene/PbS QD composite is smaller than that of PbS QDs alone in the wavelength range of shorter than 565 nm.…”

Section: Resultsmentioning

confidence: 99%

Graphene/PbS quantum dot hybrid structure for application in near-infrared photodetectors

Jeong

Song

Jeong

et al. 2020

Sci Rep

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A graphene-PbS quantum dot (QD) composite for application in high-performance near-infrared (NIR) photodetectors (PDs) is proposed in this study. A single-layer graphene flake and oleic acid-capped PbS QD composite is fabricated through the conventional sonication process, in hexane solution. Field emission scanning electron microscopy images of the graphene-PbS QD composite dispersed on a glass substrate confirm that the composite contains both aggregated graphene flakes and single-layer graphene with wrinkles; Transmission electron microscopy images reveal close packing with uniform size. The increased absorbance and quenched photoluminescence intensity of the graphene-PbS QD composite supports enhanced photoinduced charge transfer between graphene and the PbS QDs. Moreover, the specific Raman mode of the PbS QDs, embedded in the spectrum, is enhanced by combination with graphene, which can be interpreted by SERS as relevant to the photoinduced charge transfer between the Pbs QDs and graphene. For device application, a PD structure comprised by graphene-PbS QDs is fabricated. The photocurrent of the PD is measured using a conventional probe station with a 980-nm NIR laser diode. In the fabricated PD comprising graphene-PbS QDs, five-times higher photocurrent, 22% faster rise time, and 47% faster decay time are observed, compared to that comprising PbS QDs alone. This establishes the potential of the graphene-PbS QD composite for application in ultrathin, flexible, high-performance NIR PDs.

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“…The development of electronic devices light, flexible also small-size and rechargeable has increased during recent years [1][2][3]. In this respect, the polymer conductors have attracted a great interest from both academic and technical point of view over the last decade [4][5][6]. Such materials not only work in a similar way to inorganic semi-conductors (SCs) but also have additional advantages like environmental friendliness, facile synthesis and light weight [7].…”

Section: Introductionmentioning

confidence: 99%

Optical and Dielectric Properties for the Determination of Gap States of the Polymer Conductor: Polypyrrol

Belabed¹,

A²,

Belhamedi³

et al. 2020

Int J Opt Photonic Eng

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The polypyrrole is a conducting polymer prepared by chemical route. The diffuse reflectance measured in the wavelength range (300-2500 nm) permitted to calculate the refractive index (n), extinction coefficient (k), dissipation factor (tan δ) and relaxation time (τ). The optical band gap (Eg) was evaluated from the dielectric and conductivity properties, its value (1.01 eV) was confirmed by using the Tauc relation.

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Enhanced efficiency of organic solar cells based on (MEH-PPV) with graphene and quantum dots

Cited by 17 publications

References 30 publications

Graphene and PbS quantum dot hybrid vertical phototransistor

Graphene and PbS quantum dot hybrid vertical phototransistor

Graphene/PbS quantum dot hybrid structure for application in near-infrared photodetectors

Optical and Dielectric Properties for the Determination of Gap States of the Polymer Conductor: Polypyrrol

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