Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3thin films deposited on CaTiO3-buffered silicon substrates

Adamo, Carlo; Méchin, Laurence; Heeg, T.; Katz, Michael B.; Mercone, Silvana; Guillet, Bruno; Wu, Sibin; Routoure, Jean‐Marc; Schubert, J.; Zander, W.; Misra, R.; Schiffer, P.; Pan, Xiaoqing; Schlom, Darrell G.

doi:10.1063/1.4915486

Cited by 21 publications

(19 citation statements)

References 61 publications

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“…Under the necessary conditions required to obtain a functional ferromagnetic oxide, the semiconductor surface will thus be oxidized, forming a barrier for charge transport. This has been shown with electron microscopy to occur even in the highest quality ferrmomagnetic oxides grown on silicon (see Section and Figure ). Additional functionality can be gained by adding ferroelectrics and multiferroics to the equation …”

Section: Emerging Applicationsmentioning

confidence: 70%

“…The room temperature resistivity was found to be in the low 1 mΩ∙cm range (Figure f), which is similar to bulk; the Currie temperature was found to be between 320 and 345 K, which is not far below the ≈360 K reported for bulk. The authors subsequently reported the use of CaTiO 3 (CTO) as a substitute for STO in the buffer layer . The rocking curve for LSMO grown on CTO buffered‐Si is over twice as wide (≈0.7°) in comparison to the films grown on STO buffered Si .…”

Section: Materials and Functional Propertiesmentioning

confidence: 99%

“…Note that all these examples feature a typical SiO x interface layer of at least several nm, which is the consequence of the high oxygen activity required to fully oxidize the functional top layers. Reproduced under the terms and conditions of the Creative Commons Attribution 3.0 . Copyright 2015, The Authors, published by AIP Publishing LLC.…”

Section: Materials and Functional Propertiesmentioning

confidence: 99%

“…Electron microscopy reveals the formation of amorphous SiO x layer at the CTO/Si surface (Figure e), which is an expected consequence of the high oxygen reactivity that is necessary to sufficiently oxidize manganese. Altogether, these studies present successful integration of LSMO on STO‐ and CTO‐templated Si, with properties that are comparable to those of bulk LSMO. Section demonstrates how LSMO integration on Si constitutes a critical building block for device applications.…”

Section: Materials and Functional Propertiesmentioning

confidence: 99%

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Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Kumah

Ngai

Kornblum

2019

Adv Funct Materials

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Functional oxides are an untapped resource for futuristic devices and functionalities. These functionalities can range from high temperature superconductivity to multiferroicity and novel catalytic schemes. The most prominent route for transforming these ideas from a single device in the lab to practical technologies is by integration with semiconductors. Moreover, coupling oxides with semiconductors can herald new and unexpected functionalities that exist in neither of the individual materials. Therefore, oxide epitaxy on semiconductors provides a materials platform for novel device technologies. As oxides and semiconductors exhibit properties that are complementary to one another, epitaxial heterostructures comprised of the two are uniquely poised to deliver rich functionalities. This review discusses recent advancements in the growth of epitaxial oxides on semiconductors, and the electronic and physical structure of their interfaces. Leaning on these fundamentals and practicalities, the material behavior and functionality of semiconductor-oxide heterostructures is discussed, and their potential as device building blocks is highlighted. The culmination of this discussion is a review of recent advances in the development of prototype devices based on semiconductor-oxide heterostructures, in areas ranging from silicon photonics to photocatalysis. This overview is intended to stimulate ideas for new concepts of functional devices and lay the groundwork for their realization.

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Section: Emerging Applicationsmentioning

confidence: 70%

Section: Materials and Functional Propertiesmentioning

confidence: 99%

Section: Materials and Functional Propertiesmentioning

confidence: 99%

Section: Materials and Functional Propertiesmentioning

confidence: 99%

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Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Kumah

Ngai

Kornblum

2019

Adv Funct Materials

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“…There have been many investigations on the electronic transport and magnetic properties of perovskite oxides [1][2][3][4][5][6][7][8][9][10][11][12] because of their potential application in both electronic and magnetic information-storage devices. There are several models for the electronic-transport properties of these materials, and spindependent transport has been taken into account by most researchers.…”

Section: Introductionmentioning

confidence: 99%