Enhanced Electrical Properties of Thin-Film Transistor with Self-Passivated Multistacked Active Layers

Kim, Deuk Jong; Rim, You Seung; Kim, Hyun Jae

doi:10.1021/am4002259

Cited by 38 publications

(37 citation statements)

References 22 publications

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“…The reactive O2 •can effectively oxidize a-IGZO back channel, and reduce Vo in a-IGZO film. This reduction in Vo at back channel is known to improve PBS stability because the low concentration of Vo means a decrease of trap sites related with Vo and inhibits reactions between the back channel and the ambient air, which are the main causes of PBS instability [4,[8][9]. Hence, the improved stability of the VMT TFTs can be attributed to the self-passivation effect resulting from the modulated a-IGZO back channel by O2 •-.…”

Section: Methodsmentioning

confidence: 99%

P‐20: The Voltage‐based Modulation Technique Using Potassium Superoxide for Amorphous Indium‐Gallium‐Zinc Oxide Thin‐Film Transistors

Lee¹,

Jung²,

Park³

et al. 2019

Symp Digest of Tech Papers

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A voltage-based modulation technique (VMT) for oxide semiconductor is demonstrated to achieve high performance amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs). Toward this, potassium superoxide (KO2) solution is employed as a new source of potassium (K + ) and highly reactive superoxide radical (O2 •-) ions. The K + and O2 •ions in the KO2 solution are migrated into the a-IGZO active layer, and improve electrical properties of the a-IGZO active layer by acting as a carrier source and decreasing oxygen vacancy related trap sites, respectively. As a result, a-IGZO TFTs fabricated using the VMT in the optimized condition exhibit better electrical performances compared to the pristine a-IGZOTFTs; field-effect mobility increased from 6.05 to 9.67 cm 2 /Vs, and threshold voltage shift decreased from 5.0 to 3.2 V under a positive bias stress test conducted for 3,600 s.

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Section: Methodsmentioning

confidence: 99%

P‐20: The Voltage‐based Modulation Technique Using Potassium Superoxide for Amorphous Indium‐Gallium‐Zinc Oxide Thin‐Film Transistors

Lee¹,

Jung²,

Park³

et al. 2019

Symp Digest of Tech Papers

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“…Multistacked active layers require a high heat treatment (>400 °C) for perfect formation and suitable electrical characteristics. In particular, multistacked active layers developed in the early stages of application had a homojunction structure, composed of the same kinds of materials; these structures showed only slightly improved electrical characteristics compared with a single active layer …”

Section: Low‐temperature Technology For Various Layers Of Solution‐prmentioning

confidence: 99%

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Park

Kang

Kim

2019

Adv Funct Materials

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316

211

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Solution processing, including printing technology, is a promising technique for oxide thin-film transistor (TFTs) fabrication because it tends to be a costeffective process with high composition controllability and high throughput. However, solution-processed oxide TFTs are limited by low-performance and stability issues, which require high-temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution-processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low-temperature (<350 °C) solution-processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n-type and p-type oxidebased channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low-temperature solution-processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.

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“…One of main origin of PBS instability is the reaction between the back channel and ambient air [11]. In VGA TFTs, the back channel region with low V o concentration reduces the reaction between the back channel and ambient air and it act as self-passivation layer [12]. Therefore, the VGA TFTs showed improved PBS stability compared with the L100 TFT.…”

Section: Figure 4 (A) and (B)mentioning

confidence: 99%

P‐25: Enhancement in Positive Bias Stress Stability of In‐Ga‐Zn‐O Thin‐Film Transistors with Vertically Graded‐Oxygen‐Vacancy Active Layer

Kim

Yoon

Hong

et al. 2015

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To enhance the bias stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs), we proposed a simple method to deposit the vertically graded-oxygen-vacancy active layer (VGA). The oxygen partial pressure was varied during deposition in order to fabricate VGA TFTs using sputtering. By adopting this method, we could control the concentration of oxygen vacancy in active layer according to the depth. The threshold voltage shift of optimized VGA TFTs was drastically improved under positive bias stress (PBS) condition compared with conventional ones.

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Enhanced Electrical Properties of Thin-Film Transistor with Self-Passivated Multistacked Active Layers

Cited by 38 publications

References 22 publications

P‐20: The Voltage‐based Modulation Technique Using Potassium Superoxide for Amorphous Indium‐Gallium‐Zinc Oxide Thin‐Film Transistors

P‐20: The Voltage‐based Modulation Technique Using Potassium Superoxide for Amorphous Indium‐Gallium‐Zinc Oxide Thin‐Film Transistors

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

P‐25: Enhancement in Positive Bias Stress Stability of In‐Ga‐Zn‐O Thin‐Film Transistors with Vertically Graded‐Oxygen‐Vacancy Active Layer

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