Enhanced Electron Emission Using Indium Tin Oxide/Silicon Monoxide/Gold Structure

Mourad, M. Hussein; Totsu, Kentaro; Kumagai, Shinya; Samukawa, Seiji; Esashi, Masayoshi

doi:10.1142/9781860948800_0048

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In order to experimentally confirm this In ion diffusion influence, a device was fabricated consisting of In/SiO/Au deposited under the same conditions as before, with the same layer thickness. Although ion diffusion occurred, and was confirmed by SIMS, 11) compared with the ITO/SiO/Au device, the In/ SiO/Au device did not show any emission, as the conduction current was so high that the SiO rapidly broke down during device (forming) process as will be explained in the following discussion.…”

Section: Interpretation Of Resultsmentioning

confidence: 73%

Electron Emission from Indium Tin Oxide/Silicon Monoxide/Gold Structure

Mourad¹,

Totsu²,

Kumagai

et al. 2005

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

A field-emission cathode based upon the increase in the number of allowed conductive energy states in the silicon monoxide (SiO) forbidden gap as well as the increase in the number of interfacial states by indium tin oxide (ITO) ion diffusion into the SiO layer and silicon ion diffusion into the ITO layer while deposition is verified experimentally for the first time. This relatively low-cost electron emitter consists of an ITO layer sputtered on Pyrex glass, followed by an E-beam-evaporated silicon monoxide layer. The emitting layer is gold, deposited on the top of the silicon monoxide. Using ITO as a ground plate, instead of other previously published materials, a significant electron emission enhancement occurred.

show abstract

Section: Interpretation Of Resultsmentioning

confidence: 73%