2016
DOI: 10.1038/nenergy.2016.177
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Enhanced electron extraction using SnO2 for high-efficiency planar-structure HC(NH2)2PbI3-based perovskite solar cells

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Cited by 1,783 publications
(986 citation statements)
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References 44 publications
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“…[3] Unfortunately, it is not very efficient due to the charge blocking effects at the TiO 2 /perovskite interface. [36] Very recently, a novel Cl-capped TiO 2 NC was used as electron selective layer in perovskite solar cells; [31] Device Fabrication: The glass was sequentially cleaned using detergent, acetone, and isopropanol with ultrasonication for 10 min each and then were dried and treated by O 2 plasma for 15 min. The TiO 2 NC solution was spin coated on glass substrates at 2000 rpm for 45 s and annealed in ambient air at 150 °C for 30 min.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…[3] Unfortunately, it is not very efficient due to the charge blocking effects at the TiO 2 /perovskite interface. [36] Very recently, a novel Cl-capped TiO 2 NC was used as electron selective layer in perovskite solar cells; [31] Device Fabrication: The glass was sequentially cleaned using detergent, acetone, and isopropanol with ultrasonication for 10 min each and then were dried and treated by O 2 plasma for 15 min. The TiO 2 NC solution was spin coated on glass substrates at 2000 rpm for 45 s and annealed in ambient air at 150 °C for 30 min.…”
Section: Methodsmentioning
confidence: 99%
“…[35,36] We also tried SnO 2 NC/perovskite bilayer structure, but the device works very poorly with even larger dark current and lower on/off ratio comparing with the compact TiO 2 /perovskite device ( Figure S5, Supporting Information), this is most likely originated from poor energy level matching of the two materials. [36] These additional experiments indicate clearly the importance of selecting appropriate electron transport layer in achieving overall high performance. We also fabricated devices with Au electrodes and Al top electrodes, but the devices do not work well (details can be found in Figure S6 …”
Section: Doi: 101002/aelm201700251mentioning
confidence: 99%
“…Atomic layer deposited SnO 2 was once utilized by Anders Hagfeldt's group to fabricate efficient planar n-i-p devices, but the cost for the atomic layer deposition was disadvantageous for commercial application [21]. Most reported solution processes for SnO 2 preparation employed organic sols [22,23], purchased nanoparticles dilutions [24], or SnCl 4 /SnCl 2 ·2H 2 O precursors [20,25,26], which were operated under 150°C-200°C. In our recent work, we explored a sol-gel route for fabricating crystallized SnO 2 ETL below 80°C, which significantly advanced the low temperature fabrication of PSCs and the development of flexible photovoltaic devices [27].…”
Section: Introductionmentioning
confidence: 99%
“…This compactn -type metal-oxide film could preventd irect contact between the TCO and HTMs. [11] Usually,t he compactn -type metal-oxide film is considered an indispensable part in the PSC structure as it decreases the recombination of photogenerated charge carriers,which helps improvingt he photovoltaic performance of PSCs.M any inorganic n-type semiconductors,s uch as TiO 2 , [12,13] SnO 2 , [14][15][16][17][18] ZnO, [19][20][21] and Zn 2 SnO 4 [22] are confirmed good ETL candidates for highly efficient PSCs because of their suitable opticala nd electrical properties.A mong them, the most common compactn -type metal oxide is TiO 2 ,w hich is deposited through asol-gel method, [23] aerosol spray pyrolysis, [3] or spin-coating methods. [24,25] Thus,t remendouse fforts mainly focus on the optimization of the compact n-type TiO 2 film to improve the efficiencies of PSCs.…”
Section: Introductionmentioning
confidence: 99%